Quasi-Phase-Matched Difference Frequency Generation at 3.4 μm in High-Quality GaAs/AlGaAs Waveguides

Quasi-phase matched difference frequency generation in corrugation-reduced GaAs/AlGaAs periodically-inverted waveguides

“…[20][21][22][23] For DFG in the mid-infrared region, we fabricated a GaAs/AlGaAs QPM waveguide whose propagation loss at 1.55 μm and DFG conversion efficiency were estimated to be 2.3 dB cm −1 and 17% W −1 , respectively. 24) The propagation loss at 1.55 μm was revealed to be caused mainly by corrugations at the interfaces between guiding and cladding layers. We have shown that these corrugations are produced by anisotropic diffusion of III-group atoms on GaAs (100) surfaces during molecular beam epitaxy (MBE) regrowth.…”

Corrugation reduction in periodically inverted GaAs by molecular beam epitaxy growth using arsenic dimers

“…Using this technique combined with MBE regrowth of GaAs and AlGaAs on periodically inverted GaAs(100) substrates by MBE growth using arsenic tetramers (As 4 ), we have fabricated periodically inverted GaAs/AlGaAs waveguiding wavelength conversion devices and demonstrated wavelength conversion via quadratic nonlinear optical effects. [6][7][8] However, the devices have suffered from propagation losses caused by corrugations on the interfaces between the guiding and cladding layers and periodic modulation of the Al composition. Anisotropic surface diffusion of Ga and Al atoms on GaAs(100) surfaces 9) is known to be responsible for generating the corrugations.…”