“…Wide-bandgap semiconductors, such as GaN, are of great interest in condensed matter physics and microelectronics applications . Gallium nitride has an ultrawide bandgap of about 3.4 eV, which has the advantages of high power, high electron mobility, high electron saturation velocity, and high breakdown electric field, so it has been widely studied and applied in various transistors. − GaN-based electronic devices are mainly composed of lateral heterojunctions grown on large and low-cost substrates. With the development of the epitaxy technique, device design, machining technology, and gate drive technology, the commercialized GaN-based heterojunction devices grown on silicon substrates have achieved impressive power conversion efficiency as well as a compact size .…”