Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

“…The ideality factor of nearly 1 indicates less of a trapping effect, both in bulk and interface. Moreover, the state-of-the-art low reverse leakage current indicates that the damage to the mesa sidewall is low [46][47][48][49]. The leakage current in this work is much lower than that in our previous work with a low-damage etching technique, in which a device was fabricated based on AlGaN/GaN heterostructures [50].…”

Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

“…8(a) and (b), respectively. Our SBD with post-mesa nitridation shows a lowest leakage current density at 80% of the BV among the reported vertical GaN SBDs on foreign substrate for the BV between 120 and 250 V [18], [25], [35]- [37]. The performance of our SBD without edge termination is beyond the theoretical limit line of silicon, achieving a BV of 145 V, and a small differential R ON,sp of 0.3 m•cm 2 .…”

“…One of them is the large reverse leakage current [14], which can cause OFF-state power loss and reliability problems [15]. Some literatures suggest that it is possible to inhibit the leakage currents by junction termination techniques [7], [16], [17], reducing dislocation density of GaN epitaxial layer [18]- [20], passivating the etch mesa sidewall [21], reducing the doping concentration of GaN drift layer [22], [23], and decreasing the interface defect density at the Schottky contact interface [24].…”

Recent Advances in GaN‐Based Power HEMT Devices

“…[ 257–259 ] For the cost and process‐simplifying consideration, several quasivertical GaN power diodes and transistors on the foreign substrates were developed, which consist of the vertical drift region and lateral spreading layers. [ 260–264 ] In particular, the current aperture vertical electron transistor (CAVET) [ 265–268 ] and trench CAVET [ 269–271 ] can operate the device by controlling the 2DEG channel, similarly to the lateral GaN HEMTs. Recently, the advanced vertical and quasi‐vertical GaN Schottky barrier diodes (SBDs), [ 253,272,273 ] junction barrier Schottky diodes, [ 274 ] fin MOSFETs, [ 275 ] trench MOSFETs, [ 276 ] superjunction diodes [ 277 ] and PN diodes [ 278–280 ] have successively raised the V BD from 600 to 4000 V with low R on .…”