Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

Abstract

In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduces outgrowth bumps, peak-to-peak roughness from 70 to 10 nm, and texture coefficient from 3.5 to 1.7, while increasing hardness from 5.4 to 16 GPa. Future progress in superconducting current density, stray capacitance, relaxation time, and noise requires a reduction in structural defect density and surface imperfections, which can be achieved by improving film quality using such quasiepitaxial growth techniques.

Cuencas de atracción y estimativo del atractor global del modelo AFM disipativo squeeze-film-damping

“…Los Microscopios de Fuerza Atómica, que en adelante serán llamados como AFM, fueron inventados a finales del siglo XX, [4], y es una herramienta poderosa que se viene usando en varios contextos, como: criminalistica [1], biociencia [26], electrónica cuántica [34], ingeniería de materiales [5], odontología [14], ingeniería de alimentos [42], entre otras, también se invita al lector a consultar [38] y la bibliografía allí citada para una descripción detalla. De otro lado, los AFM consisten en un brazo que se deflecta y tiene una punta muy fina al final.…”

Study the effect of generating randomly rough interfaces on electron transport properties across the heterostructures

“…This leads to fluctuations in their barrier thickness and strongly affect the ratio of electron transport through them and strongly modify the I-V characteristic and resonance peaks in double barrier quantum wells [12][13][14]. The type and degree of roughness are powerfully dependent on produced surfaces morphology and therefore affect the thermal, conductance, and optical properties of heterostructures [14][15][16][17][18] and in many researches, the roughness effect on the performance of heterostructures and resonant tunneling diodes has been studied [19,20]. Indeed, selecting the technique of constructing heterostructures can control the type and degree of interfaces roughness, and also affects the efficiency of electronic devices.…”