The physics of electronic energy level alignment at interfaces formed between molecules and metals can in general be accurately captured by the ab initio GW approach. However, the computational cost of such GW calculations for typical interfaces is significant, given their large system size and chemical complexity. In the past, approximate self-energy corrections, such as those constructed from image-charge models together with gas-phase molecular level corrections, have been used to compute level alignment 1 arXiv:1904.02012v1 [cond-mat.mtrl-sci] 3 Apr 2019 with good accuracy. However, these approaches often neglect dynamical effects of the polarizability and require the definition of an image plane. In this work, we propose a new approximation to enable more efficient GW -quality calculations of interfaces, where we greatly simplify the calculation of the non-interacting polarizability, a primary bottleneck for large heterogeneous systems. This is achieved by first computing the non-interacting polarizability of each individual component of the interface, e.g., the molecule and the metal, without the use of large supercells; and then using folding and spatial truncation techniques to efficiently combine these quantities. Overall this approach significantly reduces the computational cost for conventional GW calculations of level alignment without sacrificing the accuracy. Moreover, this approach captures both dynamical and nonlocal polarization effects without the need to invoke a classical image-charge expression or to define an image plane. We demonstrate our approach by considering a model system of benzene at relatively low coverage on aluminum (111) surface. Although developed for such interfaces, the method can be readily extended to other heterogeneous interfaces.
IntroductionAccurate understanding and determination of electronic energy level alignment at moleculemetal interfaces, i.e., the relative position between molecular frontier resonance orbital energies and the Fermi level of the metal, is critical in understanding the interfacial electronic structure and charge dynamics. 1 As an example, the level alignment of a molecular junction is directly related to its low-bias conductance and current-voltage characteristics. 2 More heuristically, the level alignment at molecule-metal interfaces can be thought of as the energy barrier for charge transfer across the interface. 3 Moreover, a quantitative description of level alignment is a prerequisite in understanding and predicting functional properties of a wide range of interfaces, especially those related to heterogeneous catalysis, 4 charge transport, 5 solar energy harvesting, 6 and other energy conversion processes in the nanoscale. 7 Electronic All of the above considerations have contributed to the rise in popularity and success of many-body perturbation theory (MBPT) approaches based on the interacting Green's function formalism, a formally rigorous theoretical framework for computing quasiparticle energies. Within this formulation, the GW approxima...