Quasiperiodic modulation of electronic states at edges of tellurium nanoribbons on 
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Miao, Guangyao; Qiao, Jingsi; Huang, Xiaochun; Liu, Bing; Weiliang, Zhong,; Wang, Weihua; Ji, Wei; Guo, Jiandong

doi:10.1103/physrevb.103.235421

Cited by 6 publications

(3 citation statements)

References 46 publications

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“…Although many kinds of Te nanostructures have been synthesized in previous reports [71][72][73], the epitaxial growth of Te films on EG/SiC is still rarely reported. 3(c) and also revealed that the Te films were composed of many parallel chiral Te chains [75]. Moreover, the bandgap of Te was negatively correlated with thickness.…”

Section: Tellurenementioning

confidence: 87%

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Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Lü¹,

Liu²,

Wang³

et al. 2023

Nanotechnology

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Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced

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Section: Tellurenementioning

confidence: 87%

“…Defects with a small scale periodic at edges of Te nanoribbons were synthesized later [75]. Guo et al found that Te nanoribbons were chiral and quasiperiodic defects induced modulation of electronic states was quasiperiodic.…”

Section: Tellurenementioning

confidence: 99%

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Lü¹,

Liu²,

Wang³

et al. 2023

Nanotechnology

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show abstract

“…[20] Currently, some experiments have been successful in producing Te films. Nonetheless, among the various reports on the MBE growth of β -Te films on graphene, HOPG, and NbSe 2 substrates, [21][22][23][24] there is no attempt on the substrates with square lattice. In addition, up to now, ultra-thin films of Te with full-coverage and controllable thickness have not been achieved.…”

mentioning

confidence: 99%

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

Zhang,

Song,

Huang

et al. 2023

Chinese Phys. B

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Materials’ properties may differ in the thin-film form, especially for epitaxial ultra-thin films, where the substrates play an important role in their deviation from the bulk quality. Here by molecular beam epitaxy (MBE) and scanning tunneling microscopy/spectroscopy, we investigate the growth kinetics of ultra-thin tellurium (Te) films on SrTiO3 (STO) (001). The MBE growth of Te films usually exhibits Volmer–Weber (VW) island growth mode and no a-few-monolayer film with full coverage has been reported. The absence of wetting-layer formation in the VW growth mode of Te on STO (001) is resulted from its low diffusion barriers as well as its relatively higher surface energy compared with those of the substrate and the interface. Here we circumvent these limiting factors and achieve the growth of ultra-thin β-Te films with near-complete coverages by driving the growth kinetics to the extreme condition. There is a critical thickness (3 monolayer) above which the two-dimensional Te films can form on the STO (001) substrate. In addition, the scanning tunneling spectra on the ultra-thin Te film grown on STO exhibits an enormously large forbidden gap compared with that grown on the graphene substrate. Our work establishes the necessary conditions for the growth of ultra-thin materials with similar kinetics and thermodynamics.

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Direct Observations of Spontaneous In‐Plane Electronic Polarization in 2D Te Films

Zhang,

Yang,

Qin

et al. 2024

Advanced Materials

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Single‐element polarization in low dimensions is fascinating for constructing next‐generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low‐temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry‐breaking character in 2D Te gives rise to sizable in‐plane polarization with accumulated charges, which is demonstrated by the reversed band‐bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te‐graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.

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Quasiperiodic modulation of electronic states at edges of tellurium nanoribbons on graphene/6H−SiC(0001)

Cited by 6 publications

References 46 publications

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates

Direct Observations of Spontaneous In‐Plane Electronic Polarization in 2D Te Films

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Quasiperiodic modulation of electronic states at edges of tellurium nanoribbons on graphene/6H−SiC(0001)

Cited by 6 publications

References 46 publications

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO3 (001) substrates

Direct Observations of Spontaneous In‐Plane Electronic Polarization in 2D Te Films

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Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates