QUBiC generation 9, a new BiCMOS process optimized for mmWave applications

Melai, J.; Magnee, P.H.C.; Pouwel, I.; Weijs, P.J.W; Brunets, I.; Dalen, R. van; Vohra, Anurag; Tiemeijer, L.F.; Pijper, Ralf; Tuinhout, H.P.; Wils, Nicole; Cazana, Nicolae

doi:10.1109/bctm.2015.7340566

Cited by 4 publications

(1 citation statement)

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“…Since the high-frequency metrics (f T and f MAX ) of the given process was conservative, however, the resulting lowest NF of the conventional cascode RFA as well as the proposed RFA was inevitably high (6.5 dB and 10.4 dB, respectively) at 20 GHz compared with typical low-noise amplifiers in a similar frequency range in the literature. With more advanced SiGe BiCMOS technologies [27], it is expected that the NF will show a more significant improvement than the noise performance of the RFA prototypes. In Table 1, the performance parameters of the proposed RFAs and the conventional cascode RFA are summarized.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

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Section: Measurement Results and Discussionmentioning

confidence: 99%