QUBIC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

Broadband Direct RF Digitization Receivers

“…• Le frontal RF (RFFE) traite les signaux d'entrée asymétrique à faible amplitude, en utilisant un procédé propriétaire BiCMOS 0.25um [98] haute performance. Il intègre complètement les fonctions d'amplification, d'égalisation d'amplitude dans la bande 50-1002 MHz, de filtre anti-repliement et fournit un signal différentiel au circuit à signaux mixtes.…”

“… The RF Front-End (RFFE) processes the sensitive low-level single-ended input signal using the highperformance 0.25um BiCMOS process [98]. It provides gain and amplitude equalization over the 50-1002 MHz input band.…”

BiCMOS technology improvements for microwave application

“…The signal pads are connected to the underlying P-Well with Buried P or N-Well with Buried N (as shown in the cross section). The substrate is a (200 mm) 200 Ωcm P-type CZ wafer; standard material for QUBiC4+ and all SiGe derivatives [1,2]. In the first structure, isolation is provided by several rings of deep-trench isolation (DTI) around the well (a. in the figure).…”

“…However, these markets are not mature enough to support high wafer volumes and highly integrated solutions that are required for cost-effective manufacturing. Therefore, NXP has developed various SiGe process variants that are derived from the highly successful QUBiC4 0.25µm BiCMOS technology family [1,2]. A high degree of commonality with the parent technology that is running in high volume is maintained in all cases.…”

“…The technology comes with all the advanced passives of the parent technology and maintains full compatibility to the 0.25µm CMOS node [1,3]. Here we introduce a faster NPN heterojunction bipolar (HBT) that is discussed in Section II.…”