2022
DOI: 10.1109/tqe.2022.3209881
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Qubit-Compatible Substrates With Superconducting Through-Silicon Vias

Abstract: We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for siliconbased planar solutions, despite the presence of vias. Via stitching of ground planes is an important e… Show more

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Cited by 12 publications
(4 citation statements)
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“…On average, the Q i,low values after the HF treatment obtained in this work are around 2•10 6 . These values are in the range of α-Ta CPW resonators of similar size reported on both Si [46] and sapphire [44,48]. Transmon qubits made of α-Ta with record Q i of 7.1•10 6 and 11.8•10 6 have also been reported by Place et al [32] and Wang et al [33], respectively, while our record Q i,low is 4.5•10 6 .…”
Section: Discussionsupporting
confidence: 88%
See 1 more Smart Citation
“…On average, the Q i,low values after the HF treatment obtained in this work are around 2•10 6 . These values are in the range of α-Ta CPW resonators of similar size reported on both Si [46] and sapphire [44,48]. Transmon qubits made of α-Ta with record Q i of 7.1•10 6 and 11.8•10 6 have also been reported by Place et al [32] and Wang et al [33], respectively, while our record Q i,low is 4.5•10 6 .…”
Section: Discussionsupporting
confidence: 88%
“…While the deposition of α-Ta directly on thermally oxidized Si [42] substrates has been known since the 90s, it is widely recognized that the silicon oxide at the silicon-tantalum interface has a detrimental effect on the performance of superconducting qubits and resonators. To circumvent the issue, α-Ta coplanar-waveguide resonators, which are short loop proxies for superconducting qubits, have been fabricated with the help of seed layers such as Nb [43,44], tantalum nitride (TaN) [45], and titanium nitride (TiN) [46]. Nonetheless, this approach adds to the processing complexity during both the deposition and etching stages of the metallic layers.…”
Section: Introductionmentioning
confidence: 99%
“…), it is nevertheless extremely difficult to route all the control wires from the perimeter (length ) to individual qubits (density ) due to the unmatched scaling law; let alone to avoid crosstalk between wires. In recent years, there have been substantial efforts to exploit the third dimension to relieve this pain with various technologies borrowed from the semiconductor chip packaging, such as flip-chip bonding and throughsilicon vias [331][332][333][334][335][336][337][338]. Aside from expanding the space for wiring, a different approach is to reuse the wire for multiple targets.…”
Section: /Fmentioning
confidence: 99%
“…The latter motivates the active development of 3D integration strategies such as flip-chip [5][6][7] to avoid overcrowding of circuit elements and vertical routing [8][9][10] of input and output lines to circumvent the scaling limitations associated with lateral wirebonding. Through-silicon visas (TSVs) are needed in some vertical routing approaches [11][12][13][14], and especially for suppression of resonance modes arising from the increased size of SQPs and their packaging.…”
Section: Introductionmentioning
confidence: 99%