QWIP FPAs for high-performance thermal imaging

Schneider, Harald; Walther, M.; Schönbein, C.; Rehm, Robert; Fleißner, J.; Pletschen, W.; Braunstein, J.; Koidl, P.; Weimann, G.; Ziegler, Johann; Cabanski, Wolfgang A.

doi:10.1016/s1386-9477(99)00287-8

Cited by 57 publications

(25 citation statements)

References 14 publications

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“…Among the different types of QWIPs, GaAs/AlGaAs QW detectors are the most mature due to the almost perfect natural lattice match between GaAs and AlGaAs [42][43][44][45][46][47][48][49][50][51][52][53][54]. GaAs/AlGaAs QW devices have many advantages, including their ability to be used with standard GaAsbased manufacturing techniques and processing technologies, highly uniform and well-controlled molecular beam epitaxy growth on six-inch GaAs wafers, high yield and thus low cost, more thermal stability, and extrinsic radiation hardness.…”

Section: Intersubband Qwipmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Section: Intersubband Qwipmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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“…Detection in the LWIR band is accomplished by a photovoltaic QWIP [2,3]. In comparison with the photoconductive device, each period of this structure contains in addition a narrow quantum well followed by a tunnel barrier (see Fig.…”

Section: Dual-band Qwip Layer Structure and Detector Conceptmentioning

confidence: 99%

“…The detector of Fig. 1b is photovoltaic both in the sense that there is a photovoltage under open-circuit conditions (or equivalently, a finite photoresponse at zero bias) and in the sense that the noise current is reduced by a factor of ffiffi ffi 2 p as compared to a standard photoconductor [2,3]. Because of the latter property, this detector is also denoted as low-noise QWIP.…”

Section: Dual-band Qwip Layer Structure and Detector Conceptmentioning

confidence: 99%

“…Large infrared detector arrays with excellent thermal and spatial resolution, low fixed-pattern noise, low 1/f noise, and high pixel yield can thus be realized at moderate cost [1][2][3][4]. For the 8-12 lm long-wavelength infrared (LWIR) spectral band, QWIP presently represents the only infrared sensor technology that commercially supplies large 640 · 480 staring FPAs.…”

Section: Introductionmentioning

confidence: 99%

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Dual-band QWIP focal plane array for the second and third atmospheric windows

Schneider¹,

Maier²,

Fleißner³

et al. 2005

Infrared Physics & Technology

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“…Since 1991 QWIPs with peak photoresponses between 11-15 μm had been reported among which the detectivities hit 3.0×10 10 cm·Hz 1/2 /W [4] . The linear array [5][6][7] and focal plane array [8][9][10][11][12] devices get continuous development simultaneously as well as the single element detectors. Recently the QWIP-FPAs with 1 mega pixels have been reported by National Aeronautics and Space Administration (NASA) [13] .…”

mentioning

confidence: 99%

Development of an infrared detector: Quantum well infrared photodetector

Lü

Zheng

et al. 2009

Sci. China Ser. G-Phys. Mech. Astron.

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The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.infrared photoelectronics, QWIP, progress, development trendThe infrared detectors are transducers of infrared radiation with high-sensitivity. The early infrared detectors are thermometers, responding purely to the heating effect of the incoming infrared radiation. The detectors made based on the difference of electrons' transport performance when excited by photons are called photon detectors. The photon detectors represented by HgCdTe have achieved long-term development, and quantum well infrared photo-detectors (QWIPs), whose mechanism is sharply different from HgCdTe (HCT) detectors, are making a fine figure now.Responding to the heating effect distribution of objects is the certain development of the infrared radiation's detection. The element detector technology combined with the two-dimensional mechanical scanning system constituted the 1st generation scanning imaging detection technology, and the 2nd generation one is the infrared focal plane array technology, which transformed the mechanical scanning into electrical scanning, and single elements into arrays.In the development of array detector, the uniformity is of great importance for the imaging detection. Just like the position and role of silicon material in the micro-electronic field, the HCT infrared focal plane array plays a prominent role in the infrared imaging detection field at present. However, due to the Hg-Te combination bond in HCT material is relatively fragile, the HCT materials and devices preparation always can not be precisely controlled as silicon, making it quite difficult to reach high-uniformity. On the other hand, the main material of QWIP device is GaAs-based semiconductor material, which is only second to silicon process and 1st-order higher in uniformity. However, the quantum efficiency of QWIP is about 1st-order lower than that of HCT infrared detector due to the basic operation principle of QWIPs. Thus, the advantages of QWIPs in uniformity and disadvantages in quantum efficiency have determined a complementary status between them.In 1983, Smith et al. [1] firstly showed the possibility of using optical waveguide-type multiple quantum well for 3-5 μm and 8-14 μm infrared light detection. Two years later strong intersubband absorption in a GaAs/ Al x Ga 1−x As multi-quantum well under oblique incidence was observed by West et al. [2] . Later, a detectivity of 1.0×10 10 cm·Hz 1/2 /W and peak response wavelength of

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QWIP FPAs for high-performance thermal imaging

Cited by 57 publications

References 14 publications

Emerging technologies for high performance infrared detectors

Emerging technologies for high performance infrared detectors

Dual-band QWIP focal plane array for the second and third atmospheric windows

Development of an infrared detector: Quantum well infrared photodetector

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