R.F. reactively sputtered TiN: Characterization and adhesion to materials of technical interest

Bucher, J. P.; Ackermann, Kai; Buschor, F.W.

doi:10.1016/0040-6090(84)90379-1

Cited by 24 publications

(1 citation statement)

References 19 publications

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“…The critical load for the onset of rupture of deposited film is generally defined as that load at which the film appeared to crack under optical microscopy. Bucher et al (1984) evaluated the adhesive force of TiN prepared by RF sputtering against a high-speed steel, and showed that the critical load reached maximum at about 4 µm, and did not result in further increase with increase of film thickness. Nakanishi et al (1993) studied the strength and adhesion of Al oxide film on steel and found that the relationship between the logarithmic scratch width and the logarithmic load in the coated samples is composed of one set of two straight lines differing in slope.…”

Section: Adhesion Of Film-to-substrate Materialsmentioning

confidence: 99%

Mechanical properties of TiN-TiC mixed crystal films

Hyakutake

Imada

Honda

et al. 1998

J. Phys.: Condens. Matter

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Deposited films of TiN-TiC systems with solid solutions were prepared over the range 0.2-0.8 in x defined by TiC x N 1−x , using a RF magnetron sputtering method. Tribological properties of the samples were examined as a function of x. Microhardness increased with x, and reached maximum at around 0.7. Adhesive force between the deposited film and the substrate (high-speed steel) were measured by a scratch test. It was obtained that the adhesive force increased with x and reached maximum at about 0.5. The friction coefficient decreased monotonously with x, but showed a tendency to become minimum at 0.4-0.5. The wear rate showed a complex phenomena with the x-value, indicating two maximums at about 0.2 and 0.8. X-ray diffraction analyses were conducted with the film samples. The change in microhardness with x was clearly associated with the physical breadth. It was found that the major part of physical breadth was due to lattice distortion in all samples. The decrease in I (111)/I ( 200) also related to the increase in the microhardness. Stacking faults were found to form in the film during the sputtering deposition, suggesting that vacancy platelets were generated in the sample depending on the value of the stacking probability.

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Section: Adhesion Of Film-to-substrate Materialsmentioning

confidence: 99%

Mechanical properties of TiN-TiC mixed crystal films

Hyakutake

Imada

Honda

et al. 1998

J. Phys.: Condens. Matter

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Composition dependence of the initial oxidation behaviour of Ti1−xAlxN (x = 0.20, 0.45, 0.65) films studied by XAS and XPS

Esaka

Furuya

Shimada

et al. 1999

Surf. Interface Anal.

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To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition

Sobe

1994

Contrib. Plasma Phys.

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Investigations of nitrogen incorporation during film deposition by dc magnetron sputtering with a CrSiAl target in Ar/N, mixtures have been carried out in the range of the metallic mode. The rate of the nitrogen consumption is proportional to the nitrogen partial pressure during deposition and to the amperage. The corresponding rate constant decreases with the argon pressure. Furthermore, the condensation rate of the target species decreases with the nitrogen partial pressure and is determined by the rate constant of the nitrogen consumption. The experimental results are explained by a 4-stepped reaction sequence of nitrogen incorporation consisting in ( I ) ionization, (2) ion bombardment of the target and formation of a coverage by plating, (3) removal of the coverage by the sputter process, (4) condensation on the substrate.

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R.F. reactively sputtered TiN: Characterization and adhesion to materials of technical interest

Cited by 24 publications

References 19 publications

Mechanical properties of TiN-TiC mixed crystal films

Mechanical properties of TiN-TiC mixed crystal films

Composition dependence of the initial oxidation behaviour of Ti1−xAlxN (x = 0.20, 0.45, 0.65) films studied by XAS and XPS

To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition

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