Wide Band Gap Semiconductor Nanowires 2 2014
DOI: 10.1002/9781118984291.ch6
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Radial GaN Nanowire‐Based LEDs

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“…To date, most published accounts of NW-based UV LEDs report on axial structures, grown either by random nucleation processes [2,5,6,[8][9][10][11][12]14] or Ga-polar selective area epitaxy [7], or on randomly nucleated core-shell structures [15]. While core-shell LEDs based on selective area growth are widely reported for visible-wavelength emitters [16], relatively few reports exist on fully conformal core-shell UV LEDs [3]. However, NWs grown by N-polar selective area epitaxy [17] present several favorable attributes including high-aspect ratios for large LED active regions, arbitrarily large pitch spacings suitable for growth of single NWs with core-shell geometry, and integration with silicon substrates for potential integration with CMOS driver circuitry.…”
Section: Introductionmentioning
confidence: 99%
“…To date, most published accounts of NW-based UV LEDs report on axial structures, grown either by random nucleation processes [2,5,6,[8][9][10][11][12]14] or Ga-polar selective area epitaxy [7], or on randomly nucleated core-shell structures [15]. While core-shell LEDs based on selective area growth are widely reported for visible-wavelength emitters [16], relatively few reports exist on fully conformal core-shell UV LEDs [3]. However, NWs grown by N-polar selective area epitaxy [17] present several favorable attributes including high-aspect ratios for large LED active regions, arbitrarily large pitch spacings suitable for growth of single NWs with core-shell geometry, and integration with silicon substrates for potential integration with CMOS driver circuitry.…”
Section: Introductionmentioning
confidence: 99%