Radial heteroemitter solar cells based on VLS grown silicon nanowires

Eisenhawer, Björn; Sill, I.; Falk, F.

doi:10.1002/pssa.201200374

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…Therein, the bottom-up method usually uses chemical vapor deposition (CVD) techniques with vapor-liquid-solid (VLS) process for fabricating the dense, high aspect ratio, and vertically aligned SiNWs [1]. Moreover, the formation of pn junction and preparation of SiNWs can be easily prepared together by VLS process [10,11]. However, this method always requires a highly protected quality clean room, and expensive CVD systems lead to an increase of the production cost of material.…”

Section: Introductionmentioning

confidence: 99%

Effect of nanowire length on the performance of silicon nanowires based solar cell

Trinh

Dutta

Bui

et al. 2014

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Currently, silicon nanowires (SiNWs) are attracting attention as promising candidate materials for developing the next-generation solar cells to realize both low cost and high efficiency due to their unique structural, electrical, and optical properties. In this paper, a vertical-aligned SiNWs array has been prepared by metal-assistant chemical etching technique and implemented on SiNW array textured solar cells for photovoltaic application. The shape and size of SiNWs were controlled by etching time of 30 min, 45 min and 60 min with the length of SiNWs of 4 μm, 6 μm and 8 μm, respectively. The etching rate was estimated to be about 133 nm per minute. The optical properties of a SiNWs array with different lengths were investigated in terms of optical reflection property. Less than 6% reflection ratio from 300 nm to 800 nm wavelength was achieved. In addition, I-V characteristic was used to estimate the dependence of the SiNWs length on the performance of SiNWs based solar cell. Conservation efficiencies were achieved of 1.71%, 2.19%, and 2.39% corresponding to 4 μm, 6 μm and 8 μm SiNWs in length, respectively.

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Section: Introductionmentioning

confidence: 99%

Effect of nanowire length on the performance of silicon nanowires based solar cell

Trinh

Dutta

Bui

et al. 2014

Adv. Nat. Sci: Nanosci. Nanotechnol.

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“…was prepared, and it shows an open circuit voltage of up to 184 mV, a short circuit current density of 1.37 mA cm −2 , a fill factor of 30%, and an efficiency of 0.1%. This indicates that the proposed solar cell model can be realized, and it has good potential for further improvement through optimization of process for the synthesis of Si NWs and fabrication of solar cells .…”

Section: Resultsmentioning

confidence: 90%

“…The reflection ( R ) and transmission ( T ) spectra of Si NWs were measured by a UV–Vis‐NIR spectrometer with integrating sphere, and the absorption spectra were then calculated ( A = 1 − R − T ). The solar cell samples were prepared and characterized as described in the literature .…”

Section: Methodsmentioning

confidence: 99%

Plasma treatment of ITO films for the formation of nanoparticles toward scalable production of novel nanostructure-based solar cells

Eisenhawer

Jia

et al. 2014

Phys. Status Solidi A

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Plasma treatment of indium tin oxide (ITO) has been studied to form metallic nanoparticles (NPs) for nanostructure‐based solar cells. It is demonstrated that NPs can be formed at temperatures as low as 100 °C, and the size of NPs increases with temperature. An ITO layer treated at 100 °C has higher transmission than that treated at 200 °C for the same time. It is suggested that such NPs can be used for the conversion efficiency enhancement of ITO/Si heterojunction solar cells. It is also shown that NPs can be produced on different substrates covered by an ITO layer, such as ITO/Al foil, ITO/glass, ITO/stainless steel, and ITO/Si, where the resulting NPs were used for catalytic growth of Si nanowires (NWs). The morphology and density of Si NWs depend on a substrate. It is established that p‐doped Si NWs show larger diameters, and n‐doped Si NWs do not show obvious change of diameters compared to undoped Si NWs. New types of solar cell structures with combined radial and axial junctions have been proposed. As an example, p–n junction‐based 3D structures using the NPs obtained from treatment of ITO film are presented. Finally, a potentially scalable process flow for fabrication of nanostructure‐based solar cells is discussed. Schematic illustration of fabrication steps to produce the proposed novel solar cell with combined radial and axial junctions.

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“…In the case of a planar sample, the absorption drops to as low as 55% at 400 nm and 70% in the 600 nm wavelength region. 60 Christiansen et al reported their experiment that the nanowires grown on glass substrate have a length of 3-6 µm and diameter in range of 20-100 nm. A strong broadband optical absorption can be observed in the relatively thin Si nanowire films.…”

Section: Nanowire Structures (Bottom-up Method)mentioning

confidence: 99%

Nanostructuring methods for enhancing light absorption rate of Si-based photovoltaic devices: A review

Hong

Bae

Koo

et al. 2014

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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In recent years, there has been growing consideration of renewable energy especially photovoltaic devices. A silicon (Si) based solar cell is the most popularly and frequently considered among the photovoltaic devices, but its bulk thickness issue lowers the performance and hinders widespread application due to the material cost. Also, this thick nature causes difference in length between minority carrier diffusion and sufficient light absorption. To mitigate the issues there have been many recent studies on Si photovoltaic devices adopting nanostructuring strategies to enhance the performance. Therefore, we report two different approaches on recent nanostructuring techniques for photovoltaic devices; bottom-up and top-down processes, which are composed of vapor-liquid-solid, solution-liquid-solid, reactive ion etching with Langmuir Blodgett and metal assisted chemical etching. Those fabrication processes enable the fabrication of nanostructures with a highly ordered and alignment structures leading to enhance the light absorption and have an appropriate thickness of Si substrate regressing Auger recombination. The fabricated nanowire and nanocone array structures outperform existing results with light absorption exceeding 90%.

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Radial heteroemitter solar cells based on VLS grown silicon nanowires

Cited by 13 publications

References 18 publications

Effect of nanowire length on the performance of silicon nanowires based solar cell

Effect of nanowire length on the performance of silicon nanowires based solar cell

Plasma treatment of ITO films for the formation of nanoparticles toward scalable production of novel nanostructure-based solar cells

Nanostructuring methods for enhancing light absorption rate of Si-based photovoltaic devices: A review

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