Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Tizno, Ofogh; Ganjipour, Bahram; Heurlin, Magnus; Thelander, Claes; Borgström, Magnus T.; Samuelson, Lars

doi:10.1063/1.4978271

Cited by 8 publications

(9 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, an Esaki diode between materials with interest for tandem within a NW (GaInP/InP) has been demonstrated (see Figure c,d), but in the same article, the authors illustrate the difficulties associated with the doping value and profile of cathode and anode by trying different dopants and growth directions (p–n or n–p). Core–shell radial Esaki tunnel diodes have been reported as well. , …”

Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis and Applications of III–V Nanowires

et al. 2019

Self Cite

View full text Add to dashboard Cite

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

show abstract

Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

“…2019, 119, 9170−9220 h i b i t e d .value and profile of cathode and anode by trying different dopants and growth directions (p−n or n−p). Core−shell radial Esaki tunnel diodes have been reported as well 181,420.…”

mentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…Compared to the p–n junction nanowires along the axis, core–shell p–n junction nanowires have more advantages in high-performance photodetectors. Because the junction area is larger in core–shell structure, the shell can passivate the core and reduce the defects and traps at the core surface. − Also, due to the small diameter and thickness of the core and shell, most volume or even the whole nanowires are within the junction so that photogenerated carriers can separate and transport very effectively. However, growing III–V core–shell p–n junction nanowires is more difficult than growing p–n junction along the axis, and there is still no study on photodetectors based on p–n junction core–shell structure, to the best of our knowledge. ,,, Although electronic devices have been reported based on III–V core–shell nanowires, , only GaAs/AlGaAs and InAs/AlSb core–shell nanowires have been studied as photodetectors. ,, Note that these two materials are not p–n junction-type core–shell nanowires.…”

Section: Introductionmentioning

confidence: 99%

Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs_1–xSb_x/InAs Core–Shell Nanowire

Wang

Pan

Han

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p−n heterojunction-type GaAs 1−x Sb x /InAs core−shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performance of the devices includes an ultralow dark current (32 pA at room temperature), a high response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I−V characteristics (the current rectification ratio being ∼178 in a voltage range of ±0.3 V). These results suggest that the GaAs 1−x Sb x /InAs core−shell nanowire devices are promising for applications in nanoelectronic devices, optoelectronic devices, and integrated optoelectronic devices.

show abstract

“…a planar Si cell. The principle of a nanowire tandem cell has been first demonstrated by Heurlin et al 198 200 , while a radial tunnel junctions has recently been demonstrated by Tizno et al 201 . Although a multi-junction nanowire solar cell has not yet been realized experimentally, we like to emphasize that semiconductors with different lattice constant can be stacked into a single nanowire.…”

Section: Economics Of Nanowire Solar Cellsmentioning

confidence: 99%

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Haverkort

Garnett

Bakkers

2018

Applied Physics Reviews

View full text Add to dashboard Cite

Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic engineering by nanowire tapering allows high solar light absorption. In combination with sufficiently high carrier selectivity at the contacts, the short-circuit current (Jsc) has presently reached 29.3 mA/cm 2 , reasonable close to the 34.6 mA/cm 2 theoretical limit for InP. Although further optimization of the current is important, an equally challenging condition to approach the Shockley Queisser (S-Q) limit is to increase the open-circuit voltage (Voc) towards the radiative limit. The key requirement to reach the radiative limit is to increase the external radiative efficiency at open-circuit conditions towards unity. It is the main purpose of this review to highlight recent progress in nanophotonic engineering to further enhance the open circuit voltage of a nanowire solar cell. In addition to material optimization for increasing the internal photoluminescence efficiency, the light extraction efficiency is a major design criterium for enhancing the external radiative efficiency and thus the Voc. Since the semiconductor substrate is a sink for internally generated photoluminescence, it is equally important to eliminate the loss of emitted light into the substrate. Even at the S-Q limit, the Voc is still substantially decreased by a photon entropy loss due to the conversion of a parallel beam of photons from the sun into an isotropic emission pattern, in which each individual photon is emitted into a random direction. The 46.7% ultimate solar cell limit for direct solar irradiation can only be approached, once the cell is capable to focus all emitted photoluminescence back to the sun. We will show that nanophotonic engineering provides a pathway to approach the ultimate limit.

show abstract

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Cited by 8 publications

References 33 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs_1–xSb_x/InAs Core–Shell Nanowire

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Contact Info

Product

Resources

About

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Cited by 8 publications

References 33 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs1–xSbx/InAs Core–Shell Nanowire

Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage

Contact Info

Product

Resources

About

Vis–IR Wide-Spectrum Photodetector at Room Temperature Based on p–n Junction-Type GaAs_1–xSb_x/InAs Core–Shell Nanowire