Radiation damage effects caused by soft X-rays in silicon pad detectors

Abstract

We present the results of a systematic investigation of X-ray induced radiation damage in silicon pad sensors for total ionising doses up to 320 Gy (SiO2). The radiation induced degradation of energy spectra as well as of critical sensor parameters, capacitance and leakage current, have been measured vs total dose. Detailed analysis of the measured energy resolution shows that degradation of energy resolution can be explained by degradation of the sensor parameters. Additional radiation effects related to charge division have been observed.