Radiation damage in Ga2O3

Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H.; Ren, F.; Kim, Jihyun

doi:10.1016/b978-0-12-814521-0.00014-2

Cited by 11 publications

(8 citation statements)

References 41 publications

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“…The ionic bonds with strong binding energy in wide bandgap semiconductors offer them a unique advantage of high intrinsic radiation hardness [225,360]. Together with the intrinsic solar blindness and high critical electric field, β-Ga 2 O 3 photodetector is a promising candidate for the detection of x-ray and high-energy radiations used in space and other harsh environments.…”

Section: Radiation Effect On Ga 2 O 3 Materials and Photodetectorsmentioning

confidence: 99%

“…The wide bandgap semiconductors such as SiC and GaN have been proven to possess intrinsic radiation hardness due to their high chemical stability. Therefore, power transistors and photodetectors made of SiC and GaN materials show less degradation effect of about two order in magnitude than narrow bandgap semiconductor equivalents [360][361][362][363][364][365]. A dominant parameter is the atomic displacement energy as denoted by E d , which is an energy threshold to displace an atom from its lattice position [360].…”

Section: Radiation Effect On Ga 2 O 3 Materials and Photodetectorsmentioning

confidence: 99%

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Gallium oxide-based solar-blind ultraviolet photodetectors

Chen

Ren

et al. 2020

Semicond. Sci. Technol.

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Gallium oxide (Ga 2 O 3 ) is an emerging ultrawide bandgap (UWBG) semiconducting material as a key building block for the applications of power electronics, solar blind photodetectors and deep ultraviolet optoelectronics beyond existing technologies. To date, solar-blind photodetectors based on Ga 2 O 3 in the various forms of bulk crystals, epitaxial thin films, nanostructures, and heterostructures have been demonstrated with either high performance or multiple functionalities, however, several remaining challenges require proper solutions for practical applications. In this topic review, we summarized recent advances in processing and device performance of solar photodetectors based on Ga 2 O 3 and the associated physical mechanisms behind according to the architecture of photodetectors. The feasibility of p-type doping, the defect behavior, and radiation effects on the device performance have been discussed. The demonstration of novel and advanced architectures such as phototransistors, highly narrow-band photodetectors, photodetector arrays, and integrated NEMS resonance oscillators for real-time ultraviolet light detection are included. This review may provide better understanding on the optoelectronics properties of the Ga 2 O 3 emerging material to fully exploit its promising optoelectronic applications in deep ultraviolet spectral region.

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Section: Radiation Effect On Ga 2 O 3 Materials and Photodetectorsmentioning

confidence: 99%

Section: Radiation Effect On Ga 2 O 3 Materials and Photodetectorsmentioning

confidence: 99%

Gallium oxide-based solar-blind ultraviolet photodetectors

Chen

Ren

et al. 2020

Semicond. Sci. Technol.

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“…At the high doses, the e-h pairs decay away and have no effect on the current; the decrease in effective carrier concentration leads to a net decrease in current. [20][21][22][23] Before the electron irradiation, the current at the voltage of 3 V was 0.047 nA; after electron irradiation with a fluence at 1.0 × 10 15 cm −2 , the current at the voltage of 3 V was 0.121 nA. The electron irradiation induced the increase of electron and hole pairs, 24 which in turn caused the dark current of the β-Ga 2 O 3 photodetector to increase.…”

Section: Resultsmentioning

confidence: 99%

Effects of 1 MeV Electron Irradiation on β-Ga₂O₃ Photodetectors

Wang

Zhou

et al. 2021

ECS J. Solid State Sci. Technol.

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In this paper, the electrical and ultraviolet optoelectronic properties of the interdigitated finger geometry β-Ga2O3 photodetector were investigated before and after 1 MeV electron irradiation. Under the dark condition, the voltage at which the minimum current was located shifted from 0 V to −9.5 V after the electron irradiation. As the fluence increased from 5.0 × 1013 cm−2 to 1.0 × 1015 cm−2, the current at the voltage of 3 V of the β-Ga2O3 photodetector increased from 0.047 nA to 0.121 nA. The negative deviation of the minimum current was related to the positive charge trap caused by electron irradiation, while the improvement of the current was related to the fact that the electron irradiation produced a large number of electron -hole pairs. Under 365-nm illumination, the current at the voltage of 3 V of the β-Ga2O3 photodetector increased from 0.199 nA to 0.898 nA, as the fluence increased from 5.0 × 1013 cm−2 to 5.0 × 1014 cm−2; then, it dropped to 0.779 nA when the fluence reached 1.0 × 1015 cm−2. The increase of the current was due to the increase of defects generated by the electron irradiation under 365-nm illumination. Also, the decline of the current at the fluence of 1.0 × 1015 cm−2 may be caused by the quenching effect. Under 254-nm illumination, the current at the voltage of 3 V of the β-Ga2O3 photodetector dropped from 78.566 nA to 19.362 nA after the electron irradiation. This change was due to the lattice distortion and the reduction of the defect energy. However, as the fluence of the irradiation increased, the current increased gradually. This may be related to the increase of defects excited by electrons.

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“…φ ap = kT ln AA * T 2 − lnI 0 [6] Where I 0 is saturation current, A is the device area, A * is Richardson constant, φ ap is apparent barrier height and other symbols have usual meanings. The value of A * is taken as 41 A/cm 2 K 2 for Ga 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

“…and transient defects such as rapid annealing of minority carriers in the semiconductors. 5,6 Therefore, radiation hard materials are necessary for the reliable operation of solar-blind photodetectors under harsh environment.…”

mentioning

confidence: 99%

Gamma Irradiation Effect on Performance of β-Ga₂O₃ Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications

Tak

Garg

Kumar

et al. 2019

ECS J. Solid State Sci. Technol.

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The radiation hardness of Ni/Ga2O3/Ni metal-semiconductor-metal (MSM) solar blind photodetectors has been investigated under the exposure of 60Co γ-source. It was observed that the metal contacts were not degraded and the dark current of photodetector was slightly improved from 3.27 × 10−7 A to 1.88 × 10−7 A. The photo to dark current ratio (PDCR) was observed to increase from 5.1 to 14.1 with increasing γ-radiation exposure. The apparent Schottky barrier height (SBH) evaluated from current-voltage characteristics were found to increase with irradiation. The increased SBH was explained using image force induced barrier lowering. The obtained results reveal that the Ga2O3 solar blind photodetectors are relatively less susceptible to radiation environment.

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Radiation damage in Ga2O3

Cited by 11 publications

References 41 publications

Gallium oxide-based solar-blind ultraviolet photodetectors

Gallium oxide-based solar-blind ultraviolet photodetectors

Effects of 1 MeV Electron Irradiation on β-Ga₂O₃ Photodetectors

Gamma Irradiation Effect on Performance of β-Ga₂O₃ Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications

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Radiation damage in Ga2O3

Cited by 11 publications

References 41 publications

Gallium oxide-based solar-blind ultraviolet photodetectors

Gallium oxide-based solar-blind ultraviolet photodetectors

Effects of 1 MeV Electron Irradiation on β-Ga2O3 Photodetectors

Gamma Irradiation Effect on Performance of β-Ga2O3 Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications

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Effects of 1 MeV Electron Irradiation on β-Ga₂O₃ Photodetectors

Gamma Irradiation Effect on Performance of β-Ga₂O₃ Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications