Radiation Damage in Type II Superlattice Infrared Detectors

Jackson, Edward M.; Aifer, E. H.; Canedy, C. L.; Nolde, Jill A.; Cress, Cory D.; Weaver, B. D.; Vurgaftman, I.; Warner, Jamie H.; Meyer, J. R.; Tischler, Joseph G.; Shaw, S. A.; Dedianous, C. R.

doi:10.1007/s11664-010-1227-z

Cited by 15 publications

(4 citation statements)

References 13 publications

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“…[119] Radiation damage was found in T2SL detector with a decrease in the carrier lifetime and QE. [121] In addition, SRH lifetime in "Ga free" SL has been measured to be much longer compared to InAs/GaSb T2SL. [119,122] To reduce the dark current, [123,124] relevant current mechanisms in T2SL detectors should be understood, which include [113,125] Auger processes, SRH generationrecombination processes, the band-to-band tunneling leakage, trap-assisted tunneling and surface leakage.…”

Section: Type II Strained Layer Superlattice Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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The interest in Infrared and Ultraviolet detectors has increased immensely due to the emergence of important applications over a wide range of activities. Detectors based on free carrier absorption known as Hetero-junction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors and variations of these heterojunction structures to be used as intervalence band detectors for a wide wavelength region are presented. Although this internal photoemission concept is valid for all semiconductor materials systems, using a well studied III-V system of GaAs/Al x Ga 1−x As to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is also discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/Al x Ga 1−x As system is also presented. Superlattice detector technology, which is another promising detector architecture, can be optimized using both Type I and Type II heterostructures. Here the focus will be on Type II Strained Layer (T2SL) Superlattice detectors. T2SL Superlattices based on InAs/(In,GA)Sb have made significant improvements demonstrating focal plane arrays operating around 80K and with multiple band detection capability. A novel spectroscopic method to evaluate the band offsets of both heterojunction and superlattice detectors is also discussed.

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Section: Type II Strained Layer Superlattice Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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“…Further reporting on radiation damage for more advanced SLS architectures operating in the LWIR also shows potential for space applications. 11 The nBn IR detector under test, illustrated in Figure 1, is composed of an InAs/GaSb SLS absorber (n) and contacts (n) with an Al x Ga 1-x Sb barrier (B) grown by solid source molecular beam epitaxy (MBE). This particular detector architecture was developed by the Center for High Technology Materials (CHTM) at the University of New Mexico.…”

Section: Radiation Tolerance Of Inas/gasb-based Nbn Detectorsmentioning

confidence: 99%

Gamma-ray irradiation effects on InAs/GaSb-based nBn IR detector

Cowan

Morath

Swift

et al. 2011

Quantum Sensing and Nanophotonic Devices VIII

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IR detectors operated in a space environment are subjected to a variety of radiation effects while required to have very low noise performance. When properly passivated, conventional mercury cadmium telluride (MCT)-based infrared detectors have been shown to perform well in space environments. However, the inherent manufacturing difficulties associated with the growth of MCT has resulted in a research thrust into alternative detector technologies, specifically type-II Strained Layer Superlattice (SLS) infrared detectors. Theory predicts that SLS-based detector technologies have the potential of offering several advantages over MCT detectors including lower dark currents and higher operating temperatures. Experimentally, however, it has been found that both p-on-n and n-on-p SLS detectors have larger dark current densities than MCT-based detectors. An emerging detector architecture, complementary to SLS-technology and hence forth referred to here as nBn, mitigates this issue via a uni-polar barrier design which effectively blocks majority carrier conduction thereby reducing dark current to more acceptable levels.Little work has been done to characterize nBn IR detectors tolerance to radiation effects. Here, the effects of gamma-ray radiation on an nBn SLS detector are considered. The nBn IR detector under test was grown by solid source molecular beam epitaxy and is composed of an InAs/GaSb SLS absorber (n) and contact (n) and an Al x Ga 1-x Sb barrier (B). The radiation effects on the detector are characterized by dark current density measurements as a function of bias, device perimeter-to-area ratio and total ionizing dose (TID).

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“…Studies of the radiation effects on the dark current and quantum efficiency of T2SL barrier detectors have already been performed at cryogenic temperature [14][15][16][17][18][19][20][21], but to the authors' knowledge, the influence of a T2SL barrier photodetector operating temperature under radiation has never been investigated. In this study, InAs/GaSb XBp LWIR T2SL detectors, exhibiting a 50% cut-off wavelength equal to 11 µm and 13 µm at 80 K, were tested under 60 MeV protons with fluences up to 8•10 11 H + /cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

2024

Opto-Electronics Review

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In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff wavelength from 11 µm to 13 µm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8•10 11 H + /cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.

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Radiation Damage in Type II Superlattice Infrared Detectors

Cited by 15 publications

References 13 publications

Heterojunction and superlattice detectors for infrared to ultraviolet

Heterojunction and superlattice detectors for infrared to ultraviolet

Gamma-ray irradiation effects on InAs/GaSb-based nBn IR detector

Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

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