Radiation damage studies by a novel alpha emitter technique

Hevroni, R.; Schmidt, Michael; Yahel, Eyal; Kelson, I.

doi:10.1016/j.nimb.2013.07.021

Cited by 1 publication

(2 citation statements)

References 15 publications

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“…No damage accumulation was observed in the pre-annealed sample over a period of 60 hours. Considering the extremely high resistivity and E B values (Table 1 ), we assume that saturation in damage accumulation has already occurred, i.e., additional decay events in already damaged regions will not result in further resistivity increase 11 , 15 , 35 . Post annealing damage accumulation is presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

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A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials

Templeman

Shandalov²,

Schmidt

et al. 2017

Sci Rep

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A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. This approach is demonstrated for PbS films. The properties of the PbS (228Th) solid solution film activity were investigated by monitoring the accompanying radioactive processes. Electrical resistivity studies were performed and decay-event damage accumulation was measured, followed by isochronal annealing which presented two annealing stages and another two sub-stages. This is the first report on self-irradiating damage studies in IV-VI semiconductors and the resulting films present a novel method for the analysis of dilute defect systems in semiconductor thin films.

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Section: Resultsmentioning

confidence: 99%

“…In contrast, the recoiling atom having an energy of ~0.1 MeV produces local lattice damage by creating Frenkel pair defects 1 , 9 , 13 . A specific method for implementing this damage process was recently reported 15 . In this method, a source of 224 Ra ( τ 1/2 ~3.7 days) is placed in proximity to the thin film under study.…”

Section: Introductionmentioning

confidence: 99%