Radiation Damage Study of Electrical Properties in GaN LEDs Diode after Electron Irradiation

Abdullah, Yusof; Hedzir, Anati Syahirah; Hasbullah, Nurul Fadzlin; Muridan, Norasmahan; Hak, Cik Rohaida Che; Mahat, Sarimah

doi:10.4028/www.scientific.net/msf.888.348

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…5 In recent years, many researchers investigated the radiation hardness of InGaN-based photoelectric devices like light emitting diodes (LEDs) under γ ray, electron, neutron, and proton radiation sources. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Regarding proton radiation, some studies have investigated the effect of radiation on LED performance from relatively low to very high proton energies. 7,[15][16][17][18][19][20] B. J. Kim et al investigated the optical and electrical performance of InGaN/GaN blue LEDs with 340 keV proton irradiation; they found that the optical performance was much more sensitive to proton irradiation compared to the electrical performance.…”

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confidence: 99%

Proton Radiation Effect on InGaN/GaN Multiple Quantum Wells Solar Cell

Shan

et al. 2018

ECS J. Solid State Sci. Technol.

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An enhanced InGaN/GaN multiple-quantum-wells (MQWs) solar cell was exposed to 3 MeV protons. The performance of the solar cell, including the current-voltage characteristics and external quantum efficiency (EQE), degraded after irradiation with 3 MeV protons. The ideality factor became higher with increased proton fluence, which indicates defects were introduced into the device. The decreased peak intensity and increased full width at half maximum (FWHM) in photoluminescence (PL) spectra from InGaN, and the increased FWHM values of the InGaN satellite peaks from (002) ω-2θ diffraction curves all indicate the active region degraded. Moreover, according to the correlation between the ideality factor, the negative of one-thousandth of InGaN peak intensity, and FWHM of the PL spectra in the active region, we deduced that defects were introduced in the active region. Furthermore, we deduced the defects are Ga vacancies using SRIM software simulation. The enhanced yellow band may be affected by Ga vacancies since the other influencing factors in our experiment could be excluded. Based on the above analysis, we infer that Ga vacancies may be introduced in the active region after irradiation with 3 MeV proton, which may lead to degraded electrical parameters in InGaN/GaN MQWs solar cells.

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confidence: 99%

Proton Radiation Effect on InGaN/GaN Multiple Quantum Wells Solar Cell

Shan

et al. 2018

ECS J. Solid State Sci. Technol.

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“…The capacitance decreases after irradiation whereas the reverse current rises. LEDs were irradiated with electrons at 1000 and 1500 kGy [14]. Samples were evaluated for the capacitance and voltage characteristics both before and after irradiation.…”

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confidence: 99%

Effect of proton radiation on gallium nitride light emitting diodes

Baba,

Husni,

Saidin

et al. 2024

Bulletin EEI

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The compound semiconductor gallium nitride offers enormous potential for facilitating economic expansion in the silicon-based semiconductor industry, which is currently seeing decreasing performance returns compared to investment costs. Its high electron mobility and electric field strength at the material level have already demonstrated enormous potential for photonics and high-frequency communications applications. However, its application in devices used in the radiation-prone environment is hindered by degradation and failure caused by the radiation. In this paper, the effect of proton radiation on the electrical properties of InGaN light emitting diodes (LEDs) for the fluence range of 1×1014 cm-2 to 3×1014 cm-2 is performed. On comparing the results before and after radiation, it is found that radiation mainly affected the reverse IV characteristics of the device with little or no effect on forward IV or CV characteristics. Apart from the electric properties, the optical properties of the LEDs show improvement after radiation as the light intensity increases post-irradiation.

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“…[11][12][13] In recent years, many researchers investigated the radiation hardness of InGaN-based photoelectric devices, such as solar cells and light emitting diodes (LEDs), under the radiation sources of γ rays, electrons, neutrons, and protons. [14][15][16][17][18][19][20][21][22][23][24][25][26][27] In terms of proton radiation, the research on InGaN solar cells is very few. Many studies dedicated to investigating the radiation effect on LED performance from relatively low to very high proton energies.…”

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confidence: 99%

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

Li¹,

Shan²,

Zheng³

2020

ECS J. Solid State Sci. Technol.

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The statistical photoelectric properties of InGaN/GaN MQWs solar cells under proton irradiation were studied. Three groups of devices were irradiated with 3 MeV proton beams with fluences of 1.0 × 1011 cm−2, 5.0 × 1011 cm−2, and 1.0 × 1012 cm−2. Averaged experiment results showed that the open circuit voltage (VOC) and fill factor (FF) always decreased. In contrast, the short circuit current density (JSC) and photoelectric conversion efficiency (η) increased first and then decreased with the increase of fluence. Firstly, the donor-like defects of InGaN layer in active region played a major role in increasing JSC and η when the fluence was relatively low. Due to the introduction of donor-like defects, extra free electrons were produced, which lead to an increase in the number of effective carriers. With the further increasing of proton fluence, the number of free electrons caused by donor-like defects in the used InGaN material (low indium component) increased slowly due to pinning effect. However, additional point defects (Ga vacancies) increased significantly. Ga vacancies can act as effective non-radiative recombination centers, thereby reducing the number of effective carriers. The combined effect of pinning effect and non-radiative recombination process is responsible for the first increase and subsequent decline of JSC and η.

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Radiation Damage Study of Electrical Properties in GaN LEDs Diode after Electron Irradiation

Cited by 7 publications

References 8 publications

Proton Radiation Effect on InGaN/GaN Multiple Quantum Wells Solar Cell

Proton Radiation Effect on InGaN/GaN Multiple Quantum Wells Solar Cell

Effect of proton radiation on gallium nitride light emitting diodes

Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation

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