Radiation defects as probes for the copper and nickel contamination during the chemomechanical polishing of Si wafers

Yarykin, Nikolai; Weber, Jörg

doi:10.1016/j.mssp.2023.107938

Materials Science in Semiconductor Processing

2024

DOI: 10.1016/j.mssp.2023.107938

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Radiation defects as probes for the copper and nickel contamination during the chemomechanical polishing of Si wafers

Nikolai Yarykin,

Jörg Weber

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2024

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Copper-rich complexes in irradiated silicon

Yarykin,

Weber

2024

Journal of Applied Physics

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Only copper-related deep-level centers are produced by room-temperature MeV-electron irradiation in silicon doped with a high concentration of mobile interstitial copper atoms. In oxygen-lean FZ-Si, the well-known CuPL centers of four copper atoms show up in the DLTS, Laplace-DLTS, and photoluminescence measurements. In oxygen-rich Cz-Si, two new centers appear due to the irradiation at the expense of the CuPL defect. Reaction kinetics analysis correlates the new defects with oxygen, copper, and the irradiation-induced vacancy. The new defects are annealed at temperatures of 150–250 °C and, after passing through two more new configurations, are transformed into CuPL. The strong similarities to CuPL suggest that all four new defects are CuPL-like complexes of four copper atoms perturbed by a nearby oxygen.

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Copper-rich complexes in irradiated silicon

Yarykin,

Weber

2024

Journal of Applied Physics

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show abstract

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Radiation defects as probes for the copper and nickel contamination during the chemomechanical polishing of Si wafers

Cited by 1 publication

References 31 publications

Copper-rich complexes in irradiated silicon

Copper-rich complexes in irradiated silicon

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