Radiation Defects in CaF₂-CaO Crystals

Abstract

The spectral and kinetic parameters of electron-pulse-initiated transient absorption of oxygen-doped CaF 2 crystals were studied using pulsed spectrometry with a nanosecond time resolution. It is shown that the formation of a M + A color centers in CaF 2 -0.01M%CaO crystals occurs by thermally activated diffusion of the vacancies. Activation energy of M + A color centers formation process of 0.4 eV is established.

Defect luminescence in CaF2 nanoparticles

“…It was also established earlier that the source of radiation defects in CaF 2 single crystals is non-radiative decay of STE that can cause the formation of both F-H-, and α-І-centers [11,38,39].…”

Control of Radiation Sensitivity of the Oxygen-Containing Fluorite Crystals

“…As it follows from data on the ionic conductivity study of the MeF 2 -O 2− crystals [3], theoretical investi-gation [4], as well as from own studies of TSDC [2,5] and defects induced by electron pulse irradiation [6], O 2− -ions enter into the lattice of fluorite crystals substituting the host ions. Electric charge of the impurity ion is surplus relative to the lattice and is compensated by the anionic vacancy.…”

Various configurations of F-H pairs in CaF2 crystals

“…However, absorption in the given spectral regions has earlier been observed for lowtemperature irradiation of pure CaF 2 crystals [7], but it was not identified. An absorption band at 4.6 eV was observed for low-temperature irradiation of doped CaF 2 crystals [8]. We assume that in pure CaF 2 crystals absorption in an energy range higher than that corresponding to the absorption by V k and H color centers (3.87 and 4.03 eV, respectively [7]) is caused by the formation of hole defects with a complex structure (such as X 3 or di-H centers).…”