Radiation detector with a-SiC/c-Si heterojunction diode structure

Abstract

We have developed a radiation detector with a-SiC/c-Si heterojunction diode. The thin a-Sic film, about 150nm thickness, was made by plasma CVD method using low temperature process. In order to improve the electrical characteristics of the diode, the conditions to deposit the a-Sic film were studied. It was found that the electrical characteristics of the diode depend very much on the way they are produced. We supposed that the increase of dark current was mainly caused by the damage induced in the c-Si by the plasma. This diode was applied to -ray detector. The flattened response was obtained independent of /3 -ray energy.