1996
DOI: 10.1109/23.556894
|View full text |Cite
|
Sign up to set email alerts
|

Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

1997
1997
2021
2021

Publication Types

Select...
4
2
2

Relationship

2
6

Authors

Journals

citations
Cited by 18 publications
(4 citation statements)
references
References 4 publications
0
4
0
Order By: Relevance
“…This definition is in contrast with certain authors that define SEFI as the cause of a higher error rate than expected due to uniformly distributed upsets (Crain et al 1999;LaBel et al 1996).…”
Section: Single Event Functional Interrupt (Sefi)mentioning
confidence: 81%
“…This definition is in contrast with certain authors that define SEFI as the cause of a higher error rate than expected due to uniformly distributed upsets (Crain et al 1999;LaBel et al 1996).…”
Section: Single Event Functional Interrupt (Sefi)mentioning
confidence: 81%
“…Previous studies have revealed that the memory cells in DRAMs are susceptible to different types of radiationinduced upsets, including Single Event Upsets (SEU), Single Event Latch-up (SEL), Single Event Functional Interrupt (SEFI), and stuck bits [6]. Stuck bits have also been studied in e.g.…”
Section: Introductionmentioning
confidence: 99%
“…T HE UPSET responses of various dynamic random access memories (DRAMs) have been studied previously, as they are becoming more prevalent in space missions [1]- [5]. Many different types of responses have been seen in these devices, including single-bit upset, bit-line upset [6], single event functionality interrupt (SEFI), and stuck bits [7].…”
Section: Introductionmentioning
confidence: 99%