Radiation effects in a BiCMOS LSI interface transceiver

Belous, Anatoly; Bogatyrev, Yu. V.; Korshunov, F. P.; Artamonov, A. S.; Shvedov, S. V.

doi:10.1134/s1063739708020066

Cited by 5 publications

(5 citation statements)

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“…Historically, the technology of producing the " silicon-oninsulator" (SOI) structures is the first commercial technology, which is specially designed to provide for production of high-speed as well as radiation-proof integrated circuits (IC) by considerable reduction of parasite capacitances and almost full exclusion of leakage currents through the substrate between adjacent active IC elements [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…The technologies of formation of the SOI structures using the hydrogen transfer and the direct bonding have a number of advantages in relation to other methods [1][2][3]: a) the periods of the crystal lattices of connected materials may be different; b) it is possible to manufacture multilayer structures with super-thin layers; c) it is possible to integrate digital, analogue and radiofrequency elements in one plate.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Hydrogen Implantation Dose on the Relaxation of Electrophysical Characteristics of Silicon-on-Insulator Structures after Exposure to X-rays

et al. 2022

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Experimental studies of the relaxation of electrophysical parameters of SOI structures with different doses of hydrogen implantation after exposure to stationary X-ray radiation are presented. Investigation of high-frequency CV characteristics and pseudo-MOS transistors made it possible to obtain information about the accumulated charge, the density of surface states, mobility of carriers. The impurity composition and depth profile of hydrogen concentration were determined by the SIMS method. Structural perfection of the layers and interfaces was evaluated using the XRR and XRD methods. A different nature of the relaxation dependence and the recovery time of the electrophysical parameters for SOI structures with different doses of hydrogen implantation are recorded. The values of mobility and charge density are higher for the structure with a lower hydrogen implantation dose. Keywords: Ion implantation, silicon on insulator, radiation resistance, X-ray diffraction, pseudo-MOS transistor, residual hydrogen, SIMS.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Hydrogen Implantation Dose on the Relaxation of Electrophysical Characteristics of Silicon-on-Insulator Structures after Exposure to X-rays

et al. 2022

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“…A high energy electromagnetic and charged particle flux in cosmic space dropping on a spacecraft can cause electronic modules to malfunction or trigger a short-term loss of their functions during the ionizing radiation flowthrough time [1,2]. The electron-hole pairs [3,4] are formed under the action of gamma ray photons, charged and neutral particles passing through the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation

Pashentsev

2022

Technical Physics

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The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5-8 GHz and integrated amplifiers with an operating frequency range of 0.4-6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 μm and 0.53 μm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs. Keywords: laser radiation, transistor, microwave amplifier, photocurrent, current-voltage characteristic.

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“…The streams of cosmic dust are the constant factor of influence on space vehicles [5 -7]. The process of super-deep penetration is used to determine the possible damages of spacecrafts with flows of cosmic dust and for control systems testing [8,9].…”

Section: Introductionmentioning

confidence: 99%

High-Energy Method of Transformation of Casting Metals and Alloys to the Composite Materials

Usherenko

Ушеренко

Yazdani

2016

KEM

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Work related to the development of metal composite materials using effect of super-deep penetration (SDP) of powder particles. Composite materials are obtained from usual casting billets. During SDP process powder particles work as needles and the fibers are formed in metal matrix under dynamic interaction between powder particles and matrix material. Researchers showed high non-uniformity of the chemical composition of the processed material. Material was doped with a high amount of alloying elements at SDP. It may explain specific mechanical and chemical properties of the structure of this new composite material.

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Radiation effects in a BiCMOS LSI interface transceiver

Cited by 5 publications

References 1 publication

Effect of Hydrogen Implantation Dose on the Relaxation of Electrophysical Characteristics of Silicon-on-Insulator Structures after Exposure to X-rays

Effect of Hydrogen Implantation Dose on the Relaxation of Electrophysical Characteristics of Silicon-on-Insulator Structures after Exposure to X-rays

Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation

High-Energy Method of Transformation of Casting Metals and Alloys to the Composite Materials

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