Radiation Effects in Charge-Coupled Device (Ccd) Imagers and Cmos Active Pixel Sensors

Hopkinson, G.R.; Mohammadzadeh, Ali

doi:10.1142/s0129156404002442

Cited by 25 publications

(8 citation statements)

References 56 publications

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“…X is the entropy factor that is associated with the entropy change for electron emission and χ is a factor added to allow for any field enhanced emission that can affect the trap emission time as well as dark current generation. 14 The probability of a capture or emission of an electron over a given time t can be calculated as…”

Section: Modelling Radiation Damagementioning

confidence: 99%

Comparing simulations and test data of a radiation damaged charge-coupled device for the Euclid mission

Skottfelt

Hall

Gow

et al. 2017

J. Astron. Telesc. Instrum. Syst

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Abstract. The visible imager instrument on board the Euclid mission is a weak-lensing experiment that depends on very precise shape measurements of distant galaxies obtained by a large charge-coupled device (CCD) array. Due to the harsh radiative environment outside the Earth's atmosphere, it is anticipated that the CCDs over the mission lifetime will be degraded to an extent that these measurements will be possible only through the correction of radiation damage effects. We have therefore created a Monte Carlo model that simulates the physical processes taking place when transferring signals through a radiation-damaged CCD. The software is based on Shockley-Read-Hall theory and is made to mimic the physical properties in the CCD as closely as possible. The code runs on a single electrode level and takes the three-dimensional trap position, potential structure of the pixel, and multilevel clocking into account. A key element of the model is that it also takes device specific simulations of electron density as a direct input, thereby avoiding making any analytical assumptions about the size and density of the charge cloud. This paper illustrates how test data and simulated data can be compared in order to further our understanding of the positions and properties of the individual radiation-induced traps.

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Section: Modelling Radiation Damagementioning

confidence: 99%

Comparing simulations and test data of a radiation damaged charge-coupled device for the Euclid mission

Skottfelt

Hall

Gow

et al. 2017

J. Astron. Telesc. Instrum. Syst

View full text Add to dashboard Cite

show abstract

“…X is the entropy factor that is associated with the entropy change for electron emission and χ is a factor added to allow for any field enhanced emission that can affect the trap emission time as well as dark current generation. 17 The probability of a capture or emission of an electron over a given time t can be calculated as…”

Section: Shockley-read-hall Theorymentioning

confidence: 99%

C3TM: CEI CCD charge transfer model for radiation damage analysis and testing

Skottfelt¹,

Hall

Dryer

et al. 2018

High Energy, Optical, and Infrared Detectors for Astronomy VIII

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Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data. To further our understanding of the positions and properties of individual radiation-induced traps and how they affect spaceborne CCD performance, we have created the Centre for Electronic Imaging (CEI) CCD Charge Transfer Model (C3TM). This model simulates the physical processes taking place when transferring signal through a radiation damaged CCD. C3TM is a Monte Carlo model based on Shockley-Read-Hall theory, and it mimics the physical properties in the CCD as closely as possible. It runs on a sub-electrode level taking device specific charge density simulations made with professional TCAD software as direct input. Each trap can be specified with 3D positional information, emission time constant and other physical properties. The model is therefore also able to simulate multi-level clocking and other complex clocking schemes, such as trap pumping.

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“…Therefore, in order to restore the system equilibrium, the recombination process can be omitted and the generation process of minority carriers is dominant. [17] surface generation thermal generation depletion region Si-SiO 2 trap Si bulk defect electron SiO 2 p-sub n + diffusion diffusion Fig. 2.…”

Section: Dark Currentmentioning

confidence: 99%

Analysis of proton and γ -ray radiation effects on CMOS active pixel sensors

Ma¹,

Li²,

Guo³

et al. 2017

Chinese Phys. B

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Radiation effects on complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 µm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10 11 protons/cm 2 and 2.14 × 10 11 protons/cm 2 , respectively, while another sample has been exposed un-biased to 65 krad(Si) 60 Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed, especially for the interaction induced by proton displacement damage and total ion dose (TID) damage.

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Radiation Effects in Charge-Coupled Device (Ccd) Imagers and Cmos Active Pixel Sensors

Cited by 25 publications

References 56 publications

Comparing simulations and test data of a radiation damaged charge-coupled device for the Euclid mission

Comparing simulations and test data of a radiation damaged charge-coupled device for the Euclid mission

C3TM: CEI CCD charge transfer model for radiation damage analysis and testing

Analysis of proton and γ -ray radiation effects on CMOS active pixel sensors

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