1994
DOI: 10.1109/23.340517
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Radiation effects in oxynitrides grown in N/sub 2/O

Abstract: We characterize the effects of ionizing radiation on oxynitrides furnace-grown in N20. Results are presented on hole trapping, interface trap creation, time-dependent hole annealing, and hole de-trapping using thermally-stimulated current analysis. This work was supported ky the United States Department o| Energy under Conlr:.ct DE-AC r_4-94ALsaSnn0' DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any age… Show more

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Cited by 24 publications
(9 citation statements)
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“…The nitridation of the oxide layer enables us to reduce the ionization damage, resulting the effect of the flat-band shift to be smaller than those of devices having only oxides. 9,10) This technique would reduce the dark current for damaged devices. It might not be efficient to improve the CTI since the nitride CCD possesses the similar structure of the depletion layer to the normal CCD.…”
Section: )mentioning
confidence: 99%
“…The nitridation of the oxide layer enables us to reduce the ionization damage, resulting the effect of the flat-band shift to be smaller than those of devices having only oxides. 9,10) This technique would reduce the dark current for damaged devices. It might not be efficient to improve the CTI since the nitride CCD possesses the similar structure of the depletion layer to the normal CCD.…”
Section: )mentioning
confidence: 99%
“…It enables us to reduce the ionization damage, resulting the effect of the flat-band shift to be smaller than those of devices having only Si oxides. 14,15 This technique would reduce the dark current for damaged devices whereas it might not be efficient to improve the CTI. However, the degradation of the CTI must be similar level for normal devices.…”
Section: Cti Degradation For Devices Fabricated From Various Wafermentioning
confidence: 98%
“…It enables us to reduce the ionization damage, resulting the effect of the flat-band shift to be smaller than those of devices having only Si oxides. 11,12 This technique would reduce the dark current for damaged devices whereas it might not be efficient to improve the CTI. However, the degradation of the CTI must be similar level for normal devices.…”
Section: Cti Degradation For Devices Fabricated From Various Wafermentioning
confidence: 98%