Radiation Effects in Semiconductors and Semiconductor Devices 1977
DOI: 10.1007/978-1-4684-9069-5_4
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Radiation Effects in Transistors

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Cited by 4 publications
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“…Irreversible changes of electric characteristics of metal-oxide varistors are caused by inelastic interactions with the nuclei of atoms in the material [9]. Since the cross-section for inelastic interaction is much larger for the neutron component than for the corresponding γ component, the observed effect is mostly a result of neutron radiation component [10,11]. • C. Only a change of less than 3% is noticed.…”
Section: Resultsmentioning
confidence: 99%
“…Irreversible changes of electric characteristics of metal-oxide varistors are caused by inelastic interactions with the nuclei of atoms in the material [9]. Since the cross-section for inelastic interaction is much larger for the neutron component than for the corresponding γ component, the observed effect is mostly a result of neutron radiation component [10,11]. • C. Only a change of less than 3% is noticed.…”
Section: Resultsmentioning
confidence: 99%
“…Only the in flu ence of g ra di a tion onto their func tion al ity was tested. The ef fect of atom dis placement was not treated since it was neg li gi ble com pared to the ef fect of the cre ation of free elec trons and electron-hole pairs, in clud ing also sur face traps [17][18][19]. A com bined un cer tainty of mea sure ment was less than 5 % [20][21][22].…”
Section: The Statistical Enlargement Lawmentioning
confidence: 99%