Radiation effects of HBTs technology and design of analog multiplier

Abstract

Hetero Junction Bipolar Transistor (HBT) technology has been developed as a significant technology for both wired and wireless application for its excellent performance in Analog and RF application and compatibility with CMOS process. The study of radiation effect of HBT technology is very important to spacecraft designers to introduce the latest technology into the system. In this paper, the Radiation hardens characteristics of SiGe HBTs as well as III-V based material HBTs are measured in radls. The characteristics are compared in with and without radiation for diff erent doses of alpha particle and the influences on above device are investigated. The correlation between base and collector current in SiGe and III-V based material HBTs are established to reduce radiation impact. In this paper, the same HBTs technologies are used to design analog multiplier using a high speed low voltage Emitter Coupled Logic (ECL) inverters. A positive feedback has been introduced to increase the operating range and reduced the supply voltage requirement and tlte results on diff erent technology plaiform are reported.In this paper, we mainly focus on to make device and circuit resistive or harden against radiation environment and for bipolar process; for years, Si BJT has been widely used all over in the semiconductor and integrated circuit technologies [I ],[2],[3]. A massive research that has been done into silicon technology over the many years has resulted in incredibly cheap, reliable, and simple manufacturing and design processes [3]. The mysterious world of the III-V transistor and other band gap-engineered technologies occupies only a small slice of the overall semiconductor pie due to the expensive cost and low-yield typical of these advanced platforms [2].These technologies are used only for those applications where we require the highest speed, lowest-noise, and highest gain [2]. Clearly, a space qualified IC technology must show sufficient radiation tolerance to support high speed circuit applications as well possess total dose tolerance. SiGe & III-V HBT technology has generated considerable interest in the space community due to its robustness to total ionizing dose radiation (TID) without any additional hardening[4]. But, recently it has found that high speed SiGe HBT digital logic circuits were vulnerable to SEU [5]. Hence it is important to study the radiation effect on HBTs. To understand these 978-1-4799-3140-8/14/$31.00 ©2014 IEEE effects in HBTs [6], we use calibrated two dimensional (2-D) device simulations to assess the characteristics of SiGe HBTs. In this paper, we present an Analog Phase Detector using a high speed low voltage Emitter Coupled Logic (ECL) inverters on different technology platform. A positive feedback has been introduced to increase the operating range of the PD and to reduce the supply voltage requirement of the PD [7]. A. Simulation DetailsIn this paper, we mainly focus on to make device and circuit resistive or harden against radiation environment and for bipolar process; for years, S...