Radiation effects on floating-gate memory cells

Cellere, G.; Pellati, P.; Chimenton, A.; Wyss, J.; Modelli, Alberto; Larcher, Luca; Paccagnella, A.

doi:10.1109/23.983199

Cited by 83 publications

(30 citation statements)

References 25 publications

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“…By using specially designed instrumentation and devices, we have recently shown that FG charge loss upon heavy ion irradiation is not negligible [11], [12], even when it does not lead to a read error at the circuit output. The charge loss subsequent to a single heavy ion strike appears to be due to two parallel mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

Larcher

Cellere

Paccagnella

et al. 2003

IEEE Trans. Nucl. Sci.

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Floating gate (FG) memories are the most important of current nonvolatile memory technologies. We are investigating the long-term retention issues in advanced Flash memory technologies submitted to heavy ion irradiation. Long tails appear in threshold voltage distribution of cells hit by ions after they have been reprogrammed. This phenomenon is more pronounced in devices with smaller gate area. Results are explained by a new physics-based model of the leakage current flowing through the damaged oxides of FG memory cells. The model calculates the trap-assisted tunneling current through a statistically distributed set of defects by using electron coupling to oxide phonons. The model is used to fit experimental data and to discuss retention properties after heavy ions exposure of future devices, featuring thinner tunnel oxide.

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Section: Introductionmentioning

confidence: 99%

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

Larcher

Cellere

Paccagnella

et al. 2003

IEEE Trans. Nucl. Sci.

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“…Recently, concern about the TID effect has not been limited to just aerospace applications. In disaster robotics, for example, most of the onboard electronic devices, including flash memory and image sensors, need to be protected from a highly radioactive source to ensure a long and reliable mission after an accident at a nuclear power plant has occurred [5]- [7]. Various hardening methods have been attempted to improve device reliability against the TID effect.…”

mentioning

confidence: 99%

Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Park

Moon

Bae

et al. 2016

IEEE Electron Device Lett.

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A shift in threshold voltage caused by total ionizing dose (TID) is problematic in a MOSFET, especially in aerospace applications. Unlike traditional methods to minimize damage from TID, in this study a novel electro-thermal annealing (ETA) method to cure the TID induced damage is demonstrated for the first time. In this concept, conventional hardening or shielding techniques are not used. In a gate-all-around (GAA) MOSFET structure, dual gate electrodes were employed as an embedded nanowire-heater to generate localized Joule heat, which can anneal insulating layers, including gate oxide and spacer. With the Joule heat, trapped positive charges produced by the TID were neutralized within 200 ms. A damaged device with a radiation induced threshold voltage shift was repaired to the level of a fresh pristine device.

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“…The mechanisms proposed to explain soft errors in the floating gate are connected with the phenomena of charge loss from the floating gate due to a transient conductive path across the tunnel oxide as well as charge trapping in the tunnel oxide [18,[23][24][25]. The heavy ion Fig.…”

Section: Fig 2(b)mentioning

confidence: 99%

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

Pellish

Xapsos

Stauffer

et al. 2010

IEEE Trans. Nucl. Sci.

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Fig. 1: SiO2 sensitive volume (called SV1 in Table I) soft error rate relationships for several different space environments behind 2.5 mm of solid aluminum spherical shielding. All environments are derived from CRÈME96 with the exception of trapped protons and PSYCHIC. The deposited energy becomes the critical energy once a bin is chosen and the rate evaluated. The symbols are sparse to aid viewing -there are 240 bins per trace. The rate curve family for the silicon sensitive volume (called SV2 in Table I) is similar. Note that the PSYCHIC and trapped proton environments are cumulative fluences that were scaled by the inverse of the integration period to convert them to average rates.Abstract-We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.Index Terms-soft error rate, direct ionization, radiation transport, space environment.

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Radiation effects on floating-gate memory cells

Cited by 83 publications

References 25 publications

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

Data retention after heavy ion exposure of floating gate memories: analysis and simulation

Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

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