Radiation effects on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>D</mml:mi></mml:math>to<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>G</mml:mi></mml:math>Raman intensities of carbon nanotubes

Aitkaliyeva, Assel; Martin, Michael; Harriman, T.A.; Hildebrand, Daniel Steven; Lucca, D.A.; Wang, Jing; Chen, Di; Shao, Lin

doi:10.1103/physrevb.89.235437

Cited by 21 publications

(7 citation statements)

References 31 publications

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“…It can be observed from this figure that the intensity of the 'D' band is increased after exposure to gamma radiations. Aitkaliyeva et al studied the radiation effect on 'D' and 'G' bands of CNTs and shown that the radiation increased the 'D' band intensity [21]. The increased crystallinity of CNTs after radiation is also confirmed by the increased intensity of 'D' band which is inversely proportional to the crystallite size.…”

Section: Analysis Of Cntsmentioning

confidence: 90%

Chitosan/CNTs green nanocomposite membrane: Synthesis, swelling and polyaromatic hydrocarbons removal

Bibi

Yasin

Hassan

et al. 2015

Materials Science and Engineering: C

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Section: Analysis Of Cntsmentioning

confidence: 90%

Chitosan/CNTs green nanocomposite membrane: Synthesis, swelling and polyaromatic hydrocarbons removal

Bibi

Yasin

Hassan

et al. 2015

Materials Science and Engineering: C

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“…The increment of defect concentration at higher fluences leads to the reduction of crystal sizes, thus resulting in the enhancement of D mode. On the other hand, the number of active sixfold rings participating in D mode vibration is reduced at ultrahigh damage levels . The observed differences among the control and the four DDG devices in operational polarity and volatility/nonvolatility (see Figure S8 in the Supporting Information) can be related to the concentration and microstructure of defects controlled by the irradiation fluence.…”

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confidence: 97%

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

et al. 2018

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Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure-defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current-retention dilemma will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.

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“…Recent studies suggest that structures of low dimensional carbon system collapse when one of every six-fold ring atoms is displaced. This corresponds to a vacancy concentration of about 15%[30]. In comparison, 5% vacancy concentration is needed to roll up a 5 nm wide graphene strip and less than 1% vacancy concentration is required for strips wider than 10 nm.Early studies by Krasheninnikov et al show that formation energies of single vacancies and double vacancies decrease with decreasing diameters in single-walled nanotubes.…”

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confidence: 99%

Defect-induced carbon nanoscroll formation

Wallace

Shao

2015

Carbon

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Carbon nanoscrolls (CNSs), a graphitic structure formed by rolling of a graphene plane, must overcome an energy barrier in order to form. This energy barrier is the result of competing interactions between the van der Waals force, which wants to cause overlap of the graphene and the torsional or bending force which resists bending of the graphene plane. In this study we used molecular dynamics simulation to examine the effect of vacancies on the CNS formation dynamics. We found that the energy barrier, which must be overcome to obtain a stable scroll structure, can be lowered or completely eliminated by introducing vacancies. Individual vacancy and divacancy configurations are studied and found to reduce the torsional bending energy by allowing local stress relaxation around the defect site. A structural transition diagram is created in which we show the energy barrier height for a range of vacancy concentrations and CNS rolling widths. These results provide the theoretical backing for a new method of fabricating CNSs using a focused ion beam and shed new light on the self-rolling phenomenon in graphene.

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Radiation effects on theDtoGRaman intensities of carbon nanotubes

Cited by 21 publications

References 31 publications

Chitosan/CNTs green nanocomposite membrane: Synthesis, swelling and polyaromatic hydrocarbons removal

Chitosan/CNTs green nanocomposite membrane: Synthesis, swelling and polyaromatic hydrocarbons removal

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Defect-induced carbon nanoscroll formation

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