Radiation Effects on the Power MOSFET for Space Applications

Abstract

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal‐oxide semiconductor field‐effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on‐resistance for two kinds of MOSFETs (200 V and 100 V of VDSS) are tested for γ‐irradiation and compared with the electrical specifications under the pre‐ and post‐irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the γ‐radiation facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

A study on radiation effects on PWM-IC controller of DC/DC power buck converter

“…A simple method fo r estimating the threshold voltage shift [2] fo r the commercial grade components due to the ionizing irradiation of a low dose rate was recently proposed fo r PWM-IC. Briefly, the method consists of estimating the threshold voltage shift by the oxide charge trapping at the gate oxide immediately after irradiation.…”

“…The power consumed in PWM-IC is computed as fo llows. (I) where Ie in simulation is the current of 14 rnA flowing in the SG 1525A voltage mode pulse width modulator IC, f is the frequency with a value of 85 Khz, and Qg is the gate charge with a value of 120 nC fo r turning-on the MOSFET [2]. Then, the input power becomes 400 mW and the output becomes 295 mW, and the efficiency is 73.8 % based on load resistance of 0.028 Q.…”

Effect of ITC on the characteristics of junctionless nanowire transistor(JLNWT) for future ULSI applications: Semianalytical modeling approach

“…Interface trap charges created during manufacture of a transistor at silicon (Si) and oxide (SiO 2 ) interface degrades the device performance [7] and it can be serious device reliability issues. These interface traps are induced due to: (1) process induced damage [8], (2) stress induced damage [9], (3) radiation induced damage [10] and (4) hot carrier induced damage [11]. A lot of research work has been carried out to study the device electrical performance degradation due to interface trap charges in inversion mode (junction-based) transistor [12][13].…”

Impact of Gamma Irradiation Effects on IGBT and Design Parameter Considerations

“…A simple method for estimating the threshold voltage shift due to ionizing irradiation at low dose rates was recently proposed for power MOSFETs [1]. The method consists of estimating the threshold voltage shift due to oxide charge trapping at the MOS immediately after irradiation.…”