Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

Yakimov, E. E.; Yakimov, E. B.

doi:10.1016/j.jallcom.2020.155470

Cited by 7 publications

(13 citation statements)

References 36 publications

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“…The shear stress acting on the partial dislocation as a result of the negative stacking fault energy was estimated to be 3–30 MPa, which is much lower than the bulk CRSS of 4.5 GPa for basal slip in 6H-SiC estimated by a micropillar compression test 37 . This indicates the occurrence of a drastic decrease in activation energy due to the recombination-enhanced dislocation glide induced by UV illumination, as was reported for carrier injection and electron beam irradiation 13 , 35 .…”

Section: Resultssupporting

confidence: 72%

“…Therefore, it is desirable to develop other strategies to suppress stacking fault expansion. Another important aspect of the spontaneous expansion of 1SSFs is a decrease in the critical resolved shear stress (CRSS) for gliding of partial dislocations, called “recombination-enhanced dislocation glide” in 4H-SiC, as reported by many researchers 9 , 13 , 35 . Thanks to the drastic decrease in the CRSS, 1SSFs were reported to expand even below room temperature 35 .…”

Section: Introductionmentioning

confidence: 99%

“…Another important aspect of the spontaneous expansion of 1SSFs is a decrease in the critical resolved shear stress (CRSS) for gliding of partial dislocations, called “recombination-enhanced dislocation glide” in 4H-SiC, as reported by many researchers 9 , 13 , 35 . Thanks to the drastic decrease in the CRSS, 1SSFs were reported to expand even below room temperature 35 . Considering that the CRSS for basal slip in SiC was estimated to be as large as 5–10 GPa at room temperature without recombination-enhanced dislocation glide 36 , 37 , the anomalous decrease in the CRSS for partial dislocations is expected to take place under a high current density.…”

Section: Introductionmentioning

confidence: 99%

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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Harada

Mii

Sakane³

et al. 2022

Sci Rep

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SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011 cm−2 without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.

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Section: Resultssupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Harada

Mii

Sakane³

et al. 2022

Sci Rep

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“…[ 33 ] The low‐energy electron beam irradiation (LEEBI) was carried out at liquid nitrogen and room temperatures in a JSM 6490 (Jeol) scanning electron microscope (SEM) with a beam current I b in the 10–100 nA range and beam energy E b of 20 keV. As estimated in, [ 27 ] the temperature rise under these conditions does not exceed a few degrees. The LEEBI was carried out in the scan mode and at fixed points that allow varying e‐beam scanning velocity and a distance between scan lines, which is important for the experiments carried out in the present work.…”

Section: Methodsmentioning

confidence: 99%

“…The increase of PD mobility stimulated by the excess carriers was observed in many semiconductors and in most cases was explained by the recombination enhanced dislocation glide (REDG) mechanism, in which the energy released during recombination at dislocation-related centers is redirected to lowering the barrier for the dislocation glide. [4,6,15,26,27] However, as shown in, [10,28] the hole trapping at Si partials in 4H-SiC can also reduce their migration barrier permitting motion at room temperature. Thus, the detailed mechanism of SSF expansion is still unclear.…”

Section: Introductionmentioning

confidence: 99%

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Yakimov

2022

Physica Status Solidi (a)

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Single‐layer Shockley‐type stacking fault (SSF) expansion in 4H‐SiC due to irradiation by a focused e‐beam in the scan mode with a different rate and at fixed points has been studied. It is shown that the focused e‐beam enhances the 30° Si‐core partial dislocation glide at room and liquid nitrogen temperatures only at distances smaller than about 10 μm. The dislocations are found to glide as straight lines with a velocity independent of their length even when this length essentially exceeds the size of excitation volume and the diffusion length. The results obtained show that the dislocation velocity under irradiation is mainly determined by the double kink generation rate and allow to conclude that kink migration can occur without any excitation. The kink velocity in 4H‐SiC is estimated for the first time and the lower limit for the kink velocity is of 2 × 10−4 cm s−1 at room temperature and about 2 times smaller at liquid nitrogen temperature that confirming the small activation energy for the kink migration in 4H‐SiC.

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Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

Yakimov¹,

Yakimov²

2022

J. Phys. D: Appl. Phys.

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The effect of e-beam irradiation in the local and scan modes on the stacking fault expansion in 4H-SiC has been studied. It is shown that the distance, at which the e-beam affects the glide of partial dislocations driving the stacking fault expansion, does not exceed 10-12 μm. The dislocations were found to glide as straight lines with a velocity independent of their length, even when this length essentially exceeds the size of excitation volume. The irradiation at fixed points allows to separate the excess carrier effects on the kink formation and kink migration. The results obtained were explained under an assumption that the irradiation is necessary only to stimulate the kink pair formation and then the kinks can migrate without any excitation. That could mean that the barrier for the kink migration along Si-core 30° partial dislocations in 4H-SiC is very small.

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Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

Cited by 7 publications

References 36 publications

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC

Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

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