Radiation-hard detectors for very high luminosity colliders

Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors

“…In Fig. 3(a) we show the dependence of the full depletion voltage on the fluence after irradiation with 24 GeV protons (CERN, Geneva) [12] and reactor neutrons in Ljubljana, Slovenia [13]. Both curves show a pronounced minimum in the full depletion voltage curve at the inversion fluence.…”

“…(a) Full depletion voltage of n-type MCZ Si as a function of the fluence after irradiation with a 24 GeV protons[12] and reactor neutrons[13]. (b) Electric field profile as determined by TCT in n-type MCz silicon after irradiation with 24 GeV protons up to 2 Â 10 15 cm À2 and with 5 Â 10 14 cm À2 1 MeV neutrons.…”

Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

“…The present review will cover a few specific topics of the last three research lines (device studies). More detailed information on the overall activity of RD50 can be found in the website [11], the last status reports [12][13][14], in recent conference proceedings [15][16][17][18][19] and the references therein.…”

Dosimetria de altas doses de raios gama e elétrons com diodos de Si resistentes a danos de radiação

“…Um dos mais importantes resultados, obtidos por estes estudos, mostrou que a presença de oxigênio, em concentrações elevadas (10 17 cm -3 ), na estrutura dos detectores de Si, aumenta a tolerância aos danos de radiação responsáveis pelas alterações da tensão de depleção total destes dispositivos [18][19][20] [11,12,[19][20][21][22][23].…”