Radiation Hardened CMNOS/SOS Mask Programmable Rom and General Processor Unit

Cricchi, J.R.; Barth, Daniel; Oehler, H. G.; Lyman, R. C.; Shipley, J. M.; Ahlport, B. T.

doi:10.1109/tns.1977.4329199

Search citation statements

Order By: Relevance

Paper Sections

Select...

Radiation Studies1

Sos Memories1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1981

2017

Publication Types

Select...

Book1

Other1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using an ion-implantation energy of 70 keV, the polysilicon is doped to a level of 1 x 10 16 /cm 2 with boron. More recently, Cricchi et al 218, 219 have built and tested MNOS-SOS EAROMs as well as CMOS-SOS circuits with nitride-oxide gate dielectrics and obtained similar results to that of Brucker. Aluminum is deposited from a filament system and alloyed at 450 °C.…”

Section: Radiation Studiesmentioning

confidence: 64%

See 1 more Smart Citation

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Ipri

1981

Silicon Integrated Circuits

View full text Add to dashboard Cite

Section: Radiation Studiesmentioning

confidence: 64%

“…216 " 219 Stewart 237 has described the properties of floating-gate, avalanche injection MOS-SOS devices (FAMOS) and has built a 2048-bit EAROM with them. The ROMs have been discussed previously and were one of the earliest forms of SOS memories fabricated.…”

Section: Sos Memoriesmentioning

confidence: 99%