Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions

Moscatelli, F.; Scorzoni, A.; Poggi, Antonella; Bruzzi, M.; Sciortino, S.; Lagomarsino, S.; Wagner, G.; Mandić, I.; Nipoti, Roberta

doi:10.1109/tns.2006.872202

Cited by 64 publications

(56 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…37 The graphene sheets we used are monolayer everywhere, and we transfer them to SiO2/Si substrate, the binding energy between carbon atoms in graphene and SiO2/Si is few meV 38 and is much weaker than the interactions with SiC substrate, which results in less effective for the resistance of graphene to bump. Another reason is that SiC has higher values for the electron-hole pair production energy (7.8-9 eV), 39 which proves it to be a radiation-harder material, as compared to SiO2. This again confirms the substrate plays an important role during the formation process of nanostructures on graphene.…”

Section: B the Fabrication Of Nanodot Array Experimentallymentioning

confidence: 99%

Investigation on gallium ions impacting monolayer graphene

Zhao

Yan

et al. 2015

AIP Advances

View full text Add to dashboard Cite

In this paper, the physical phenomena of gallium (Ga+) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga+ ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga+ ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm2. Afterwards, the focused ion beam over 21.6 ion/nm2 is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

show abstract

Section: B the Fabrication Of Nanodot Array Experimentallymentioning

confidence: 99%

Investigation on gallium ions impacting monolayer graphene

Zhao

Yan

et al. 2015

AIP Advances

View full text Add to dashboard Cite

show abstract

“…As an example, in Ref. [7] the authors report how the room temperature current density of epitaxial SiC pn junctions made on 55 mm thick epitaxial layer decreased from 60 to 20 nA/cm 2 after an irradiation of 10 16 n/cm 2 .…”

Section: Leakage Currentmentioning

confidence: 99%

“…The SiC device has a thickness of 55 mm, data are redrawn from Ref. [7]. The current density of the Si device (300 mm thick) has been calculated using Eqs.…”

Section: Leakage Currentmentioning

confidence: 99%

Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors

Bruzzi

Sadrozinski

Seiden

2007

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. For such applications, many material technologies have been explored [1][2][3][4][5]. Among them, the wide bandgap semiconductor 4H-SiC is a promising candidate for high temperature and radiation applications due to its relatively high atomic displacement energy (20-35 eV), three times larger bandgap, and higher temperature conductivity compared to Si [5,6].…”

Section: Introductionmentioning

confidence: 99%