Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for high energy physics applications

Díez, Sergio Cañas; Clark, Tyson A.; Grillo, A. A.; Kononenko, W.; Martinez-McKinney, F.; Newcomer, F. M.; Norgren, Matthew; Rescia, S.; Spencer, E.; Spieler, H.; Ullán, M.; Wilder, M.

doi:10.1088/1748-0221/8/10/p10009

Cited by 2 publications

(2 citation statements)

References 20 publications

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“…Experimental demands include some combination of high repetition rates (order of ns dead time), below 10 ps time of arrival (TOA) resolution, and low power (between 0.1 mW and 1 mW per channel). An integrated chip using Silicon Germanium (SiGe) technology was developed by Anadyne, Inc. in collaboration with the University of California Santa Cruz, which has a long experience in SiGe IC development [1]. The chip is called Anadyne-SCIPP Read Out Chip: AS-ROC.…”

Section: Introductionmentioning

confidence: 99%

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

DeWitt,

Galloway,

Saffier-Ewing

et al. 2024

J. Inst.

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Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel. The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.

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Section: Introductionmentioning

confidence: 99%

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

DeWitt,

Galloway,

Saffier-Ewing

et al. 2024

J. Inst.

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“…SiGe material based devices are capable to operate in the radiation harsh environment [1][2][3][4]. It had been demonstrated [5,6] that SiGe alloys are prospective for fabrication of γ-ray detectors.…”

Section: Introductionmentioning

confidence: 99%

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Čeponis

Deveikis

Ластовский³

et al. 2020

Sensors

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The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.

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Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for high energy physics applications

Cited by 2 publications

References 20 publications

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

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