Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments

Boas, Alexis C. Vilas; de Melo, M. A. A.; Santos, R. B. B.; Giacomini, R.; Medina, N. H.; Seixas, L. E.; Finco, S.; Palomo, F. R; Romero-Maestro, A.; Guazzelli, Marcilei A.

doi:10.1109/radecs47380.2019.9745697

Cited by 6 publications

(1 citation statement)

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“…HD-GITs show minimal D-RDS,ON shift after exposure to 300 kRad of Co-60 exposure (1 MeV x-rays) [267]. SP-HEMTs also show minimal change after 300 kRad of 10 keV x-ray TID exposure [268].…”

Section: A Total Ionizing Dosementioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

110

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…HD-GITs show minimal D-RDS,ON shift after exposure to 300 kRad of Co-60 exposure (1 MeV x-rays) [267]. SP-HEMTs also show minimal change after 300 kRad of 10 keV x-ray TID exposure [268].…”

Section: A Total Ionizing Dosementioning

confidence: 99%