Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

Abstract

We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS 2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U 28+ ions using three different fluences. By electrical characterization, atomic force microscopy and Raman spectroscopy we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 × 10 11 ions/cm 2 , the MoS 2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance. * electronic address: marika.schleberger@uni-due.de

Double-resonant LA phonon scattering in defective graphene and carbon nanotubes

“…The graphene samples were then transferred to a vacuum chamber and irradiated with swift heavy ions (Xe 26+ , 91 MeV) using a fluence of 65.000 ions/µm 2 at normal angle to the graphene plane. Under grazing-incidence irradiation these projectiles cause extended modifications in graphene 30,31 , while at normal incidence point-like defects are created 32 . Due to their high energy, the interaction of swift heavy ions with matter is exclusively by inelastic scattering.…”

Orienting spins in dually doped monolayer MoS2: from one-sided to double-sided doping

“…14,15 Introducing transition metal (TM) impurities during chemical synthesis can hardly circumvent producing intrinsic defects. 16 Alternatives were suggested e.g.…”

Swift-heavy ion irradiation-induced latent tracks in few- and mono-layer MoS2

“…Recently, O. Ochedowski et al have reported the observation of about 50-nm-diameter hillock on monolayer MoS 2 irradiated with 1.14 GeV U 28? ions [13]. However, SHIs irradiation-induced modification of the properties of mono-and few-layer MoS 2 has not been reported yet.…”