Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuović, Željko; Capan, Ivana; Cohen, David D.; Forneris, J.; Iwamoto, Naoya; Ohshima, Takeshi; Siegele, Rainer; Hoshino, Norihiro; Tsuchida, Hidekazu

doi:10.1016/j.nimb.2014.12.064

Cited by 8 publications

(7 citation statements)

References 35 publications

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“…2). A similar shift was already observed in 4H-SiC epi-layers irradiated with protons, alpha particles and electrons, and it was interpreted as the release of stress produced by defect clusters [30,31];…”

Section: Resultssupporting

confidence: 76%

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Capan

Brodar

Pastuović

et al. 2018

Journal of Applied Physics

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We present results from combined Laplace-Deep Level Transient Spectroscopy (Laplace-DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC. Using Laplace-DLTS, we were able to distinguish two previously unresolved sub-lattice-inequivalent emissions, causing the broad Z1/2 peak at 290 K that is commonly observed by conventional DLTS in n-type 4H-SiC. This peak has two components with activation energies for electron emission of 0.58 eV and 0.65 eV. We compared these results with the acceptor levels of VC obtained by means of hybrid density functional supercell calculations. The calculations support the assignment of the Z1/2 signal to a superposition of emission peaks from double negatively charged VC defects. Taking into account the measured and calculated energy levels, the calculated relative stability of VC in hexagonal (h) and cubic (k) lattice sites, as well as the observed relative amplitude of the Laplace-DLTS peaks, we assign Z1 and Z2 to VC(h) and VC(k), respectively. We also present the preliminary results of DLTS and Laplace-DLTS measurements on deep level defects (ET1 and ET2) introduced by fast neutron irradiation and He ion implantation in 4H-SiC. The origin of ET1 and ET2 is still unclear.

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Section: Resultssupporting

confidence: 76%

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Capan

Brodar

Pastuović

et al. 2018

Journal of Applied Physics

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“…After the sample was bombarded, it was observed that two defects were introduced by irradiation. One of the defects had a broad peak, probably due to the presence of several states or defects with closely spaced emission rates as observed earlier [22]. The irradiation induced defects were labelled as E 0.39 and E 0.62 .…”

Section: Tablesupporting

confidence: 58%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

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“…Initial electrical measurements proved the excellent quality of prepared pristine SBD samples having a reverse current of the order of few pA and a terminal capacitance below 10 pF at -40 V (not shown here) [24]. The calculated free carrier concentration in pristine sample was ~ 5 × 10 14 cm -3 across the thickness of epitaxial layer.…”

Section: A Pre-implantationmentioning

confidence: 73%

“…The ion species and energies were chosen to obtain the lattice atom displacement density distribution within the depletion region of reversely biased partially damaged SBDs examined by the DLTS. The He ion fluence values used for these measurements correspond to the fluence range in which the charge collection efficiency in selectively implanted 4H-SiC epi-layers decreases linearly as a function of fluence, as demonstrated in our previous radiation hardness study of these epitaxial layers using the IBIC microscopy [24]. A negligible error of the calculated fluence values might be caused by a dead time of the data acquisition system.…”

Section: Methodsmentioning

confidence: 88%

Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

Pastuović

Siegele

Capan

et al. 2017

J. Phys.: Condens. Matter

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We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n-type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial deep level transient spectroscopy measurement performed on as-grown material in the temperature range 150-700 K revealed the presence of only two electron traps, Z (0.64 eV) and EH (1.84 eV) assigned to the two different charge state transitions of the isolated carbon vacancy, V (=/0) and (0/+). C-V measurements of as-implanted samples revealed the increasing free carrier removal with larger ion fluence values, in particular at depth corresponding to a vicinity of the end of an ion range. The first DLTS measurement of as-implanted samples revealed formation of additional deep level defects labelled as ET1 (0.35 eV), ET2 (0.65 eV) and EH3 (1.06 eV) which were clearly distinguished from the presence of isolated carbon vacancies (Z and EH defects) in increased concentrations after implantations either by He or H ions. Repeated C-V measurements showed that a partial net free-carrier recovery occurred in as-implanted samples upon the low-temperature annealing following the first DLTS measurement. The second DLTS measurement revealed the almost complete removal of ET2 defect and the partial removal of EH3 defect, while the concentrations of Z and EH defects increased, due to the low temperature annealing up to 700 K accomplished during the first temperature scan. We concluded that the ET2 and EH3 defects: (i) act as majority carrier removal traps, (ii) exhibit a low thermal stability and (iii) can be related to the simple point-like defects introduced by light ion implantation, namely interstitials and/or complex of interstitials and vacancies in both carbon and silicon sub-lattices.

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Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Cited by 8 publications

References 35 publications

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

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