2018
DOI: 10.1016/j.nima.2018.02.018
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Radiation hardness of thin Low Gain Avalanche Detectors

Abstract: Low Gain Avalanche Detectors (LGAD) are based on a n ++ -p + -p-p ++ structure where an appropriate doping of the multiplication layer (p + ) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acc… Show more

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Cited by 49 publications
(44 citation statements)
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“…The fit of the convoluted Landau and Gaussian distributions to the data is also shown. The difference of factor ∼ 10 was observed in the most probable signal (parameter p1 of the fit) which is also expected from the measured gain [7] and the difference in the detector thickness. As the noise level is 20% larger for LGAD, due to higher capacitance (see Fig.…”
Section: Measurementssupporting
confidence: 73%
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“…The fit of the convoluted Landau and Gaussian distributions to the data is also shown. The difference of factor ∼ 10 was observed in the most probable signal (parameter p1 of the fit) which is also expected from the measured gain [7] and the difference in the detector thickness. As the noise level is 20% larger for LGAD, due to higher capacitance (see Fig.…”
Section: Measurementssupporting
confidence: 73%
“…The first stage of amplification uses fast transimpedance amplifier designed by UCSC [15] followed by a second amplifier which gives signals large enough to be relatively easily recorded by a 40 GS/s digitizing oscilloscope with 2.5 GHz bandwidth. The reference time required for measurement of the time resolution was provided from a non-irradiated LGAD detector produced by HPK [7,15]. It is 50 µm thick, has a diameter of 0.8 mm and high gain of ∼ 60 at 330 V and room temperature.…”
Section: Measurementsmentioning
confidence: 99%
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“…This is possible only in thin sensors (50-micron thick or less) where the external voltage can create an electric field of the order of 250-300 kV/cm without causing electrical breakdown in other areas of the detector. Figure 53 shows the bias voltage necessary to maintain a gain G = 10 as a function of irradiation for 50-micron thick CNM sensors implanted with a shallow gain layer, using the irradiation results from [45] (squares), the initial acceptor removal parameterisation of equation (5-4) with the value of the parameters shown in Figure 27, and the Massey model of impact ionization [27], The very good agreement between the WF2 predicted values and the measured points indicates the correctness of the initial acceptor removal model and the appropriate gain parameterisation of the Massey equations in this range of the electric field. The thick solid line indicates the bulk contribution to the total gain value (right y-axis): it starts to be important at ~1e15 n eq /cm 2 , and it becomes ~ 50% at ~2e15 n eq /cm 2 .…”
mentioning
confidence: 99%