2011 12th European Conference on Radiation and Its Effects on Components and Systems 2011
DOI: 10.1109/radecs.2011.6131408
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Radiation hardness of two-dimensional focal plane detector arrays for LWIR/VLWIR space sounding missions

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Cited by 9 publications
(4 citation statements)
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“…The N + area of the N + /P photodiode is doped with In or B. A bump bonding is used to connect the cathode to the CMOS readout circuit [23]. Although this device is not irradiated, we choose to present its results because, to the best of our knowledge, this is the first time that DC-RTS amplitudes are reported in such a device that is today considered for space mission where the radiation environment is known to creates defects inducing dark current [23], [24] and DC-RTS in other technologies.…”
Section: A Hgcdte-based Imagersmentioning
confidence: 99%
“…The N + area of the N + /P photodiode is doped with In or B. A bump bonding is used to connect the cathode to the CMOS readout circuit [23]. Although this device is not irradiated, we choose to present its results because, to the best of our knowledge, this is the first time that DC-RTS amplitudes are reported in such a device that is today considered for space mission where the radiation environment is known to creates defects inducing dark current [23], [24] and DC-RTS in other technologies.…”
Section: A Hgcdte-based Imagersmentioning
confidence: 99%
“…HgCdTe photodiode arrays have been tested for radiation damage and showed little impact from radiation damage expected for the JWST mission. [16][17][18][19][20][21][22][23] The only degradation found was a slight decrease in the responsivity and a slight increase in dark current. HgCdTe APD arrays are relative new and no data on the radiation damage are available at present.…”
Section: Introductionmentioning
confidence: 96%
“…A series of studies have been conducted and some results have been obtained for the TID effect of IRFPA at home and abroad. Qiao Hui et al studied the effect of γ radiation on the dark current of HgCdTe photovoltaic detectors and observed the increase of dark current after irradiation; 5 Yann Hello et al investigated the TID effect of IRFPA and tested that the dark current changed significantly; 6 Min Su Lee et al conducted a study on the radiation hardening of the 0.35µm process readout circuit; 7 Weber et al studied the TID effect of HgCdTe IRFPA at 55 K and observed a significant degradation of the output level after irradiation; 8 Cherniak et al conducted a study on the TID effect of InGaAs IRFPA and observed a significant increase of the bias current after irradiation. 9 At present, the research on the TID effect of infrared photovoltaic detectors at home and abroad is more comprehensive, but the research on the TID effect of IRFPA is less.…”
Section: Introductionmentioning
confidence: 99%