Radiation-induced dark current increases in CCDs

Hopkinson, G.R.

doi:10.1109/radecs.1993.316569

Cited by 32 publications

(23 citation statements)

References 21 publications

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“…The evolution of dark current over time will show an increase which is expected to be linear over time, assuming a roughly constant radiation dose [14,15]. Also, high similarities are expected to be found for the majority of pixels in the instrument, as these will have experienced similar levels of radiation.…”

Section: Dark Current Evolutionmentioning

confidence: 99%

In-Orbit Radiometric Calibration and Stability Monitoring of the PROBA-V Instrument

et al. 2016

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Since its launch in May 2013, the in-orbit radiometric performance of PROBA-V has been continuously monitored. Due to the absence of on-board calibration devices, in-flight performance monitoring and calibration relies fully on vicarious calibration methods. In this paper, the multiple vicarious calibration techniques used to verify radiometric accuracy and to perform calibration parameter updates are discussed. Details are given of the radiometric calibration activities during both the commissioning and operational phase. The stability of the instrument in terms of overall radiometry and dark current is analyzed. Results of an independent comparison against MERIS and SPOT VEGETATION-2 are presented. Finally, an outlook is provided of the on-going activities aimed at improving both data consistency over time and within-scene uniformity.

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Section: Dark Current Evolutionmentioning

confidence: 99%

In-Orbit Radiometric Calibration and Stability Monitoring of the PROBA-V Instrument

et al. 2016

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“…The gate oxide of the devices under consideration is particularly thin; consequently, the effect of holes trapping within the gate oxide is considerably small [20]. The created interface traps that have energy levels within the silicon bandgap contribute to the processes of charge carriers (electrons/holes), emission (generation), and capture (recombination), which leads to an increase in the pixel dark current [29]. The rate of charge carrier recombination (per unit volume per unit time) can be expressed according to the Shockley-Hall-Read (SHR) theory by the following equation [32]: (1) where and are the hole and electron capture cross-sections, respectively, is the (interface) trap density, is the (interface) trap energy level, is the intrinsic Fermi level, and are the hole and electron concentrations, respectively, is the intrinsic carrier concentration, is Boltzmann's constant, is the absolute temperature, and is the carrier thermal velocity, which is given by the following equation [32]: (2) where is the conductivity effective mass.…”

Section: Ionizing Radiation-induced Dark Currentmentioning

confidence: 99%

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Eid¹,

Chan²,

Fossurn³

et al. 2001

IEEE Trans. Nucl. Sci.

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Abstract-An ionizing radiation-tolerant CMOS active pixel sensor (APS) image sensor test chip was designed employing the physical design techniques of enclosed geometry and -channel guard rings. The test chip was fabricated in a standard 0.35-m CMOS process that has a gate-oxide thickness of 7.0 nm. It was irradiated by a -ray source up to a total ionizing radiation dose level of approximately 30 Mrd (Si) and was still functional. The most pronounced effect was the increase of dark current, which was linear with total dose level. The rate of dark current increase was about 1 to 2 pA/cm 2 /Krd (Si), depending on the design of the pixel. The results demonstrate that CMOS APS image sensors can be designed to be ionizing radiation tolerant to total dose levels up to 30 Mrd (Si). The fabrication process is standard CMOS, yielding a significant cost advantage over specialized radiation hard processes.Index Terms-Active pixel sensor, CMOS active pixel sensor,

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“…[1], [2] One of the main effects of the ionizing energy transfer is the increase in the density of states at the Si/Si02 interface. These induced states behave as dark current generation centres from depleted areas [4]- [6]. Consequently, the main effect of the ionizing energy transfer is an increase in the surface dark current of detectors.…”

Section: This Part Concerns Either Ccd or Cmos Silicon Detectorsmentioning

confidence: 99%

“…These defects act as generation centres inside the depleted region, and therefore raise the volume dark current [4]- [6]. Each displacement damage generation centre is localized and implies a sharp dark signal increase in the considered pixel.…”

Section: This Part Concerns Either Ccd or Cmos Silicon Detectorsmentioning

confidence: 99%

“…It can be given as peak-to-peak or RMS value, but in certain cases, we give the number of "bright" (or "hot") pixels (with a dark signal higher than a certain limit) DSNU increase is meanly due to displacement damage in the silicon created by energetic particles. These defects act as generation centres lying within the depleted region, and therefore raise dark signal in the volume [4][5][6]. Each displacement damage generation centre is localized and implies a sharp dark signal increase in the considered pixel.…”

Section: Dark Signal Non Uniformity (Dsnu)mentioning

confidence: 99%

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Radiation effects on image sensors

Bardoux

Penquer

Gilard

et al. 2017

International Conference on Space Optics — ICSO 2012

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Radiation is a major issue for satellite development, especially when using detectors, either for the mission itself, or for platform sensors. This paper will give CNES experience in the effects of radiations on detector and mission performances. Data from several satellites is presented (Earth observation, Astronomy, star trackers). We will make comparison between this data, to try to determine common behaviours. We will finish by describing the mitigation techniques against radiation effects.

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Radiation-induced dark current increases in CCDs

Cited by 32 publications

References 21 publications

In-Orbit Radiometric Calibration and Stability Monitoring of the PROBA-V Instrument

In-Orbit Radiometric Calibration and Stability Monitoring of the PROBA-V Instrument

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Radiation effects on image sensors

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