Radiation-induced degradation of optoelectronic sensors

Statistical spread on the displacement damage degradation of irradiated semiconductors

“…For a given pixel, damage induced by each interaction is summed whatever their nature. The number of atomic displacements, produced by nuclear interactions (elastic, inelastic), are modelled thanks to GEANT4 Monte Carlo toolkit [51][52][53][54][55][56]. GEANT4 is a C++ library dedicated to transport of particle through matter.…”

“…3. Differently, Coulombian scattering recoil nuclei are directly computed thanks to analytical cross section expressions [51][52][53][54][55][56]. Finally, the S i damage distribution is estimated.…”

“…Finally, the S i damage distribution is estimated. Dark current distribution can be estimated simply assuming proportionality between the dark current and the number of atomic displacements [51][52][53][54][55][56]. Thermal emission rate of defects can also be modelled in an improved version that also takes into account electric field enhancement effect [66].…”

“…Experimental damage factors for GaAs devices [19][20][21] are plotted against the proton incident energy in the Fig. 1 ( [52]). The deviation from the expected value provided by NIEL (red line) is obvious.…”