Radiation-induced leakage currents: atomic scale mechanisms

Lenahan, R.M.; Campbell, Jason P.; Kang, Ai-Guo; Liu, S.T.; Weimer, R. A.

doi:10.1109/23.983179

Cited by 20 publications

(10 citation statements)

References 30 publications

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“…Ceschia et al 2 suggested that the traps/defects involved in the electron conduction are neutral; however, these defects likely have a positively charged precursor. Candidates for precursor defects include hole traps ͑such as an EЈ center, 10 which becomes neutralized after capturing a hole͒; however, the microscopic character of the traps/defects involved in the process is not yet resolved. It has been suggested that both RILC and SILC originate from the same defect.…”

Section: Resultsmentioning

confidence: 99%

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

Márka

Pasternak

Albridge

et al. 2003

Journal of Applied Physics

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Damage enhanced electron transport, across thin oxides in x-ray irradiated Si/SiO 2 samples, was measured via a contactless two-color laser technique. This method involves two steps: ͑1͒ optically stimulated electron injection into the oxide and ͑2͒ detection of transport, trapping, and recombination rates using time-dependent electric-field-induced second-harmonic generation arising from charge separation at the interface. Measured electron transport rates across an irradiated oxide are found to be substantially higher in comparison to unirradiated oxides. This effect is attributed to the presence of x-ray irradiation-induced defects that act as intermediate trapping sites facilitating enhanced electron tunneling through the oxide. The possible nature of the radiation-induced trapping sites is discussed.

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Section: Resultsmentioning

confidence: 99%

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

Márka

Pasternak

Albridge

et al. 2003

Journal of Applied Physics

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“…6. The mechanism for this increase has been mainly attributed to the trap-assisted inelastic tunneling process [13]. With the positive bias at the gate terminal, the electrons can tunnel to the oxide traps and then to the gate electrode.…”

Section: ) Radiation-induced Gate Leakage Currentmentioning

confidence: 99%

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Zhang

Jazaeri

Pezzotta

et al. 2016

2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/R

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Abstract-The DC performance of both n-and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. The total ionizing dose effects show limited influence in the on-current of all the tested nMOSFETs. Nonetheless, the leakage current increases significantly, affecting the normal device operation of the nMOSFETs. These phenomena can be linked to the charge trapping in the oxides and at the Si/oxide interfaces, related to both the gate oxide and the shallow trench isolation oxide. In addition, it has been observed that the radiation-induced effects are partly recovered by the long-term post-irradiation annealing. To quantify the total ionizing dose effects on DC characteristics, the threshold voltage, subthreshold swing, and drain induced barrier lowering have also been extracted for nMOSFETs.

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“…Ceschia et al suggested that the traps/defects involved in the electron conduction are neutral; however, these defects likely have a positively charged precursor [2]. Candidates for precursor defects include hole traps (such as an center [14], which becomes neutralized after capturing a hole); however, the microscopic character of the traps/defects involved in the process is not yet resolved. It has been suggested that both RILC and SILC originate from the same defect [15].…”

Section: B Leakage Mechanisms In Oxidesmentioning

confidence: 99%

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

Pasternak

Chatterjee

Shirokaya

et al. 2003

IEEE Trans. Nucl. Sci.

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Radiation induced leakage current in a variable-thickness SiO 2-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.

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Radiation-induced leakage currents: atomic scale mechanisms

Cited by 20 publications

References 30 publications

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

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