Radiation influence on planar reconfigurable field effect transistor low noise amplifier performance

Abstract

Many novel devices have been proposed in the literature to face the short channel effect and the reconfigurable FET (RFET) is one of them. The circuits based on new devices need to be investigated when they are introduced. This work has two parts: (i) designing cascoded RFET low noise amplifiers (LNA) and their performance analysis; and (ii) single-event performance analysis of RFET-LNAs. The designed LNA has a gain of 12 dB and a noise figure of 2.42 dB. The device in the common gate configuration mode is more susceptible to heavy ion radiation and collects more charge (QC) compared to the device in the common source configuration mode. Through temporal and frequency analysis, the irradiation disturbance is examined. In the temporal analysis, the collected charge (QC) is used as a metric, and the spectrogram is used in the frequency analysis.