Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

Hazdra, P.; Smrkovský, Petr; Vobecký, J.; Mihaila, A.

doi:10.1109/ted.2020.3038713

Cited by 25 publications

(19 citation statements)

References 14 publications

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“…[ 23 ] Once again, NIEL is also similar in the region of interest for 6 and 6.5 MeV protons in SiC (Figure 4b), as the range of 6 MeV protons in SiC (≈199 μm) is well beyond the drift layer thickness required to block 650 V (≈5 μm). A similar pattern was observed for neutron‐irradiated devices, [ 18 ] where the carrier removal of SiC was found to be more than an order of magnitude higher even for a slightly higher defect introduction rate in SiC.…”

Section: Resultssupporting

confidence: 79%

“…In a bipolar device, such as the Si PiN diode, these deep levels act as recombination centers (i.e., lifetime killers) for the charged carriers, consequently decreasing their lifetime and the diode's on-state conductivity. [18] In the SiC MPS structure, which is a unipolar diode, the deep levels compensate the nitrogen shallow donors, causing the removal of carriers (electrons) present in the drift layer. [19,20] The exact nature and position of the proton-induced deep level traps in Si and 4H-SiC have been extensively studied in the literature [21,22] through deep-level transient spectroscopy (DLTS), even for proton energies very close to 6 MeV, [23,24] which is used in this work.…”

Section: Physical Origin Of Degradation Effectsmentioning

confidence: 99%

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Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes

Siddiqui,

Hallén,

Usman

2023

Physica Status Solidi (a)

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We present a comparison of the displacement damage effects in Si and silicon carbide (4H‐SiC) commercial diodes due to 6 MeV proton irradiation. The devices chosen for this study are rated at 650 V/8 A, making them technological alternatives of each other. It is found that Si diodes degrade ∽4.6 times faster than the SiC counterparts under forward biasing. In addition, the leakage current for the SiC diode in reverse mode decreases due to proton irradiation, whereas it increases for the Si diode under the same conditions. The difference in the behavior of both the diodes, as a result of the irradiation process, is discussed in terms of the induced deep level defects. The results show that SiC diodes are more resistant to displacement damage caused by proton irradiation than Si devices, with the same specifications.This article is protected by copyright. All rights reserved.

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Section: Resultssupporting

confidence: 79%

Section: Physical Origin Of Degradation Effectsmentioning

confidence: 99%

Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes

Siddiqui,

Hallén,

Usman

2023

Physica Status Solidi (a)

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“…Wide bandgap (WBG) semiconductor such as silicon carbide (SiC) devices can withstand much higher operating voltages and temperatures compared to traditional semiconductors such as Si and Ge [1] [2]. Due to its high thermal conductivity (4.9 W/cm/K), average displacement threshold (22-35 eV), and wide energy bandgap of the polytype 4H-SiC (3.27 eV), 4H-SiC-based electronic devices are appropriate for harsh environment applications such as high-radiation environments and high-temperature applications [3] [4] [5] [6] [7] [8] [9]. Metal-on-4H-SiC Schottky barrier detectors (SBDs) with epitaxial layer thicknesses of tens of micrometers are common choices for detection of x-rays and charged particles like alpha particles [10] [11] [12] [13] [14] [15] [16].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection

Karadavut

Nag

Kleppinger

et al. 2022

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV

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Ni/Y2O3/4H-SiC metal-oxide-semiconductor (MOS) structure has been realized on 20 μm thick 4H-SiC epitaxial layers by depositing 40 nm thick Y2O3 layers through pulsed laser deposition and using nickel as the gate contact. 4H-SiC based MOS structures with thin oxide layers are being considered as novel detector structures for ionizing radiation. Y2O3 being a wide bandgap (5.5 eV) and high-𝑘 dielectric (𝑘 = 14-16) is beneficial to lower the junction leakage current and increasing the bias voltage limit. The current-voltage (I-V) characteristics recorded for the fabricated MOS devices revealed excellent rectification properties and a very low leakage current density of 80 pA/cm 2 at a gate bias of -500 V. The Mott-Schottky plot obtained from high frequency (1 MHz) capacitance-voltage (C-V) measurement revealed a linear trend as observed in Ni/4H-SiC Schottky barrier detectors. A built-in potential of 2.0 V has been calculated from the C-V characteristics. The radiation detection properties of the MOS detectors have been assessed through pulse height spectroscopy using a 241 Am alpha particle source. The detectors revealed a well-defined peak in the pulse height spectrum with an energy resolution of 1.6% and a charge collection efficiency (CCE) of 82% at 0 V applied bias (self-biased mode) for the 5486 keV alpha particles. The energy resolution and the charge collection efficiency were seen to improve further with increased gate bias. A CCE of 1.0 and an energy resolution of 0.4% has been observed when the MOS detector was biased at -50 V. A very long hole diffusion length of 56 μm has been calculated using a drift-diffusion model and the variation of experimentally obtained CCE with bias voltage. Such long hole diffusion length and the high built-in potential has led to the highefficiency detection performance in self-biased mode. Capacitance-mode deep level transient spectroscopy revealed the presence of deep level trap centers commonly observed in 4H-SiC epilayers with trap concentrations similar to that has been observed in our previous devices.

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“…SiC can be used as near core neutron flux detectors given its strong radiation resistance capability [ 14 ]. Furthermore, a radiation resistance capability comparison between Si and 4H-SiC was conducted [ 15 ]. It demonstrated that, due to the lower thickness and high doping level, 4H-SiC is a more reliable device than Si in a radiation environment.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Zhang

Aspinall

2021

Sensors

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Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

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Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

Cited by 25 publications

References 14 publications

Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes

Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes

Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

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