2018
DOI: 10.1134/s1063782618110192
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Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

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Cited by 2 publications
(2 citation statements)
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“…Evaluation of harmonics power dependence on oscillating frequency of subterahertz radiation source. 0.4−6.5 THz are observed; in study [10] the research of the radiation stability of the diodes on GaAs/AlAs SCSL is presented. Based on the early observed power dependencies on GD oscillating frequencies, considering nature of variation of GD (ëë 1, 2, 3) operating characteristics before and after irradiation with gamma rays, it is possible to evaluate the harmonics power dependence on frequency of the subterahertz radiation source as part of the heterodyne on GD and the multiplier on SCSL in general (Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Evaluation of harmonics power dependence on oscillating frequency of subterahertz radiation source. 0.4−6.5 THz are observed; in study [10] the research of the radiation stability of the diodes on GaAs/AlAs SCSL is presented. Based on the early observed power dependencies on GD oscillating frequencies, considering nature of variation of GD (ëë 1, 2, 3) operating characteristics before and after irradiation with gamma rays, it is possible to evaluate the harmonics power dependence on frequency of the subterahertz radiation source as part of the heterodyne on GD and the multiplier on SCSL in general (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…One of such radiation sources is a device, consisting of heterodyne on Gunn diode (GD) oscillator and multiplier on semiconductor superlattice (SCSL) [7]. Currently the resistance of the conventional volumetric [8] and planar GD [9], as well as diodes based on GaAs/AlAs superlattices [10], to ionizing types of radiation is actively studied; radiation resistance of subterahertz range source based on GD and SCSL is examined in this study.…”
Section: Introductionmentioning
confidence: 99%