Radiation stability of an InGaZnO thin-film transistor in heavy ion radiotherapy

Koyama, Akihiro; Miyoshi, Hiroaki; Shimazoe, Kenji; Otaka, Yutaka; Nitta, Munetaka; Nishikido, Fumihiko; Yamaya, Taiga; Takahashi, Hiroyuki

doi:10.1088/2057-1976/aa78ae

Cited by 20 publications

(11 citation statements)

References 21 publications

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“…(4), the value of x can be converted to the corresponding frequency f. Additionally, the value of Nt can be determined by the value of SID, as shown in Eq. (2). For the dependence of SID on frequency f can be measured by SR785, the correspondence between Nt and f can also be obtained from Eq.…”

Section: Resultsmentioning

confidence: 99%

“…Amorphous indium zinc oxide (IZO) thin-film transistors (TFTs) are considered to be one of promising devices for applying in the flat panel display and flexible integrated circuits due to their high electron mobility, large switching ratio, good uniformity, and electrical stability [1]. In particular, IZO TFTs are expected to be applied in sealed environments such as spacecraft, high-energy particle accelerators and medical detectors [2,3]. However, these devices will suffer from a long-term hydrogen incorporation in such conditions.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

Chen

Liu

Wang

et al. 2021

IEEE J. Electron Devices Soc.

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The long-term reliability of InZnO (IZO) thin film transistors (TFTs) under a hydrogen-containing environment is researched. Hydrogen incorporation induces hydroxyl groups and oxygen vacancies, leading to the generation of electrons and extra random trap/emission processes in the IZO films. Consequently, the electrical properties and low frequency noise characteristics of IZO TFTs are deteriorated under the long-term hydrogen treatment. Additionally, the recovery characteristics of IZO TFTs after the hydrogen treatment demonstrate that the hydrogen induced hydroxyl groups and oxygen vacancies remain stable at room temperature. The oxygen vacancies can be eliminated, while the hydroxyl groups may still exist at a high temperature. These results may provide useful guidelines in the design and application of IZO TFTs .

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

Chen

Liu

Wang

et al. 2021

IEEE J. Electron Devices Soc.

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“…In a space environment, various cosmic rays are present and semiconductor devices used in a spacecraft desirably have high radiation resistance. However, the high-energy radiation resistance of the OSFET has been little considered [7] and, as far as we know, there is no report on the high-energy radiation resistance of submicron OSFETs.…”

Section: Introductionmentioning

confidence: 99%

9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor

Tsuda

Takahashi

Hamada

et al. 2022

Symp Digest of Tech Papers

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We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field‐effect transistor showed a negative drift in threshold voltage of less than 300m V and substantially no degradation in subthreshold slope and mobility. After 60 hours from the irradiation, approximately 40% of the threshold voltage variation was recovered.

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“…As a result, oxide TFT circuits are the preferred choice for the application under consideration. In addition, the large-area flexible devices with IGZO TFT technology are immune to permanent damages due to high doses of radiation [13], [14]. Therefore, IGZO TFT based circuits are believed to exhibit robust performance even if they are close to the X-ray radiation sensor matrix.…”

Section: Introductionmentioning

confidence: 99%

Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs For Flexible X-Ray Detector

Bahubalindruni

Tiwari

Pereira

et al. 2020

IEEE J. Electron Devices Soc.

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This paper reports on-chip rail-to-rail timing signals generation thin-film circuits for the first time. These circuits, based on a-IGZO thin-film transistors (TFTs) with a simple staggered bottom gate structure, allow row and column selection of a sensor matrix embedded in a flexible radiation sensing system. They include on-chip clock generator (ring oscillator), column selector (shift register) and row-selector (a frequency divider and a shift register). They are realised with rail-to-rail logic gates with level-shifting ability that can perform inversion and NAND logic operations. These logic gates are capable of providing full output swing between supply rails, V DD and V SS , by introducing a single additional switch for each input in bootstrapping logic gates. These circuits were characterised under normal ambient atmosphere and show an improved performance compared to the conventional logic gates with diode connected load and pseudo CMOS counterparts. By using these high-performance logic gates, a complete rail-to-rail frequency divider is presented from measurements using D-Flip Flop. In order to realize a complete compact system, an on-chip ring oscillator (output clock frequency around 1 kHz) and a shift register are also presented from simulations, where these circuits show a power consumption of 1.5 mW and 0.82 mW at a supply voltage of 8 V, respectively. While the circuit concepts described here were designed for an X-ray sensing system, they can be readily expanded to other domains where flexible on-chip timing signal generation is required, such as, smart packaging, biomedical wearable devices and RFIDs. INDEX TERMS Rail-to-rail logic gates, IGZO TFT, timing signals, flexible radiation sensing system.

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Radiation stability of an InGaZnO thin-film transistor in heavy ion radiotherapy

Cited by 20 publications

References 21 publications

Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor

Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs For Flexible X-Ray Detector

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