Radiation Testing of PIN Photodiodes

Kalma, A. H.; Hardwick, W. H.

doi:10.1109/tns.1978.4329558

Cited by 24 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although avalanche photodiodes (APDs) can offer significant performance advantages over PIN detectors, most radiation studies have focused on PIN detectors. [1][2][3][4] This paper presents both a theoretical model and experimental measurements of the effects of radiation on the operational parameters of an APD.…”

Section: Introductionmentioning

confidence: 99%

Measurements of Natural Radiation Effects in a Low Noise Avalanche Photodiode

Swanson¹,

Arnau²,

Walther

1987

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Measurements of Natural Radiation Effects in a Low Noise Avalanche Photodiode

Swanson¹,

Arnau²,

Walther

1987

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Kalma and Hardwick [8] observed similar dark current changes in fully depleted silicon PIN diodes after irradiation with 1-MeV neutrons. Because APDs operate in a fully depleted mode, this is an appropriate comparison.…”

Section: Volume Dependence Of Bulk Dark Current Increasesmentioning

confidence: 66%

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

Becker

Miyahira

Johnston

2003

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Different silicon avalanche photodiode structures are compared for the effects of 51-MeV protons on dark current, photocurrent, and noise. Large differences in depletion region volumes contributed to differences in sensitivity to bulk dark current increases. At high fluences, ionization damage appeared to be the dominant mechanism for dark current increases in some devices. Increases in 1/f-type noise and supplemental gamma ray testing indicate that these high dark current increases are due to surface damage effects. A discussion of structural parameters that may heighten radiation sensitivity is presented, including doping levels and p-n junction termination techniques.

show abstract

“…We have made in [11] the comparison between the results of our models and experimental measurements obtained from [21,22]. The results show a very acceptable concordance.…”

Section: Physical Modelmentioning

confidence: 84%

A possible new experimental test of the wavelengthindependence of the velocity of light in vacuum

Ragul'Skii¹

1977

Sov. J. Quantum Electron.

View full text Add to dashboard Cite

The physical processes taking place in PIN photodiodes exposed to spatial radiation have been investigated in the infrared band. The modelling and simulation of the diodes was done by means of numerical algorithms using the coupled Poisson and continuity equation to obtain the behaviour of electronic devices. The effects of the radiation studied were atomic displacement damages. The present work aims at a comparison of the behaviour of differently constructed PIN photodiodes after exposure to 10 MeV protons and 1 MeV neutrons having fluences in both cases in the range of 1 × 10 13 to 2.5 × 10 14 particle cm −2 . We have also included in our simulation the effects produced by the light illumination on the photodiodes; in this case the intensities used ranged from 0 to 2 mW cm −2 . We have obtained as a result of our research one expression that relates the total reverse current and the incident radiation.

show abstract

Radiation Testing of PIN Photodiodes

Cited by 24 publications

References 5 publications

Measurements of Natural Radiation Effects in a Low Noise Avalanche Photodiode

Measurements of Natural Radiation Effects in a Low Noise Avalanche Photodiode

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

A possible new experimental test of the wavelengthindependence of the velocity of light in vacuum

Contact Info

Product

Resources

About