Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

Physica B: Condensed Matter

Auret

et al. 2016

Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

Section: Introductionmentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Physica B: Condensed Matter

Auret

et al. 2016

“…Because of its wide bandgap, SiC is a suitable substrate for developing devices that are capable of operating at high temperature as well as in harsh radiation fields [5,6], such as space, accelerator facilities and nuclear power plants [7][8][9]. The electrical and thermal properties of SiC also make it suitable electronic devices operating at high power, high temperature and high frequency [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

Nuclear Instruments and Methods in Physics Research Section B:

Auret

et al. 2016

“…These characteristics make SiC a very good semiconductor capable of outperforming silicon in electronic devices for high-power, high-frequency and high-temperature applications [7]. SiC is a key material for the next-generation photonics [8] and a good candidate for electronic devices used in radiation-harsh environments such as in aerospace, accelerator facilities and nuclear power plants [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Materials Science in Semiconductor Processing

Coelho

et al. 2016

We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies E C -0.42 and E C -0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (E C -0.10) as well as a defect linked to the carbon vacancy (E C -0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD.